Characterization of Shallow- and Deep-Level Defects in...

ECS Journal of Solid State Science and Technology 2016 Vol. 5; Iss. 4

Characterization of Shallow- and Deep-Level Defects in Undoped Ge 1− x Sn x Epitaxial Layers by Electrical Measurements

Takeuchi, Wakana, Asano, Takanori, Inuzuka, Yuki, Sakashita, Mitsuo, Nakatsuka, Osamu, Zaima, Shigeaki
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Volume:
5
Year:
2016
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0151604jss
File:
PDF, 449 KB
english, 2016
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