Specific features of the current–voltage characteristics of...

Semiconductors 2016 / 1 Vol. 50; Iss. 1

Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide

Mikhaylova, A. I., Afanasyev, A. V., Ilyin, V. A., Luchinin, V. V., Sledziewski, T., Reshanov, S. A., Schöner, A., Krieger, M.
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Volume:
50
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782616010152
Date:
January, 2016
File:
PDF, 171 KB
english, 2016
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