Volume 50; Issue 1

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Semiconductors
Volume 50; Issue 1

Semiconductors

Volume 50; Issue 1

1

Structure and optical properties of ZnO with silver nanoparticles

Lyadov, N. M., Gumarov, A. I., Kashapov, R. N., Noskov, A. I., Valeev, V. F., Nuzhdin, V. I., Bazarov, V. V., Khaibullin, R. I., Faizrakhmanov, I. A.

Journal:

Year:

2016

Language:

english

File:

PDF, 501 KB

english, 2016

2

Vertical heterostructures based on graphene and other 2D materials

Antonova, I. V.

Journal:

Year:

2016

Language:

english

File:

PDF, 1.70 MB

english, 2016

3

Formation of graphite/sic structures by the thermal decomposition of silicon carbide

Mynbaeva, M. G., Lavrent’ev, A. A., Mynbaev, K. D.

Journal:

Year:

2016

Language:

english

File:

PDF, 541 KB

english, 2016

4

On the complex structure of the optical spectra of a tetragonal calomel single crystal in a wide energy range

Sobolev, V. V., Sobolev, V. Val., Anisimov, D. V.

Journal:

Year:

2016

Language:

english

File:

PDF, 436 KB

english, 2016

5

Photodetectors based on CuInS2

Bulyarsky, S. V., Vostretsova, L. N., Gavrilov, S. A.

Journal:

Year:

2016

Language:

english

File:

PDF, 261 KB

english, 2016

6

Simulation of the β-voltaic effect in siliconpinstructures irradiated with electrons from a nickel-63 β source

Nagornov, Yu. S., Murashev, V. N.

Journal:

Year:

2016

Language:

english

File:

PDF, 622 KB

english, 2016

7

Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm

Emelyanov, V. M., Mintairov, S. A., Sorokina, S. V., Khvostikov, V. P., Shvarts, M. Z.

Journal:

Year:

2016

Language:

english

File:

PDF, 647 KB

english, 2016

8

Simulation of the characteristics of InGaAs/InP-based photovoltaic laser-power converters

Emelyanov, V. M., Sorokina, S. V., Khvostikov, V. P., Shvarts, M. Z.

Journal:

Year:

2016

Language:

english

File:

PDF, 544 KB

english, 2016

9

Organic light-emitting diodes based on a series of new polythienothiophene complexes and highly luminescent quantum dots

Vashchenko, A. A., Goriachiy, D. O., Vitukhnovsky, A. G., Tananaev, P. N., Vasnev, V. A., Rodlovskaya, E. N.

Journal:

Year:

2016

Language:

english

File:

PDF, 331 KB

english, 2016

10

Growth, structure, and properties of GaAs-based (GaAs)1–x–y(Ge2)x(ZnSe)yepitaxial films

Zaynabidinov, S. Z., Saidov, A. S., Leiderman, A. Yu., Kalanov, M. U., Usmonov, Sh. N., Rustamova, V. M., Boboev, A. Y.

Journal:

Year:

2016

Language:

english

File:

PDF, 320 KB

english, 2016

11

Exciton emission of crystalline Zn(S)Se thin films arranged in microcavities based on amorphous insulating coatings

Kozlovsky, V. I., Krivobok, V. S., Kuznetsov, P. I., Nikolaev, S. N., Onistchenko, E. E., Pruchkina, A. A., Timiryazev, A. G., Chentsov, S. I.

Journal:

Year:

2016

Language:

english

File:

PDF, 413 KB

english, 2016

12

Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide

Mikhaylova, A. I., Afanasyev, A. V., Ilyin, V. A., Luchinin, V. V., Sledziewski, T., Reshanov, S. A., Schöner, A., Krieger, M.

Journal:

Year:

2016

Language:

english

File:

PDF, 171 KB

english, 2016

13

Erratum to: “Vacancies in Epitaxial Graphene”

Davydov, S. Yu.

Journal:

Year:

2016

File:

PDF, 78 KB

2016

14

Mechanisms of the degradation of Schottky-barrier photodiodes based on ZnS single crystals

Korsunska, N. E., Shulga, E. P., Stara, T. R., Litvin, P. M., Bondarenko, V. A.

Journal:

Year:

2016

Language:

english

File:

PDF, 361 KB

english, 2016

15

Optical properties of PbS thin films

Akhmedov, O. R., Guseinaliyev, M. G., Abdullaev, N. A., Abdullaev, N. M., Babaev, S. S., Kasumov, N. A.

Journal:

Year:

2016

Language:

english

File:

PDF, 307 KB

english, 2016

16

On the preparation and photoelectric properties of Tl1–xIn1–xSnxSe2(x= 0.1–0.25) alloys

Danylchuk, S. P., Myronchuk, G. L., Mozolyuk, M. Yu., Bozhko, V. V.

Journal:

Year:

2016

Language:

english

File:

PDF, 380 KB

english, 2016

17

On the specific electrophysical properties ofn-InSe single crystals

Abdinov, A. Sh., Babaeva, R. F., Rzaev, R. M., Ragimova, N. A., Amirova, S. I.

Journal:

Year:

2016

Language:

english

File:

PDF, 214 KB

english, 2016

18

Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry

Makeev, M. O., Ivanov, Y. A., Meshkov, S. A.

Journal:

Year:

2016

Language:

english

File:

PDF, 683 KB

english, 2016

19

Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer

Rykov, A. V., Dorokhin, M. V., Malysheva, E. I., Demina, P. B., Vikhrova, O. V., Zdoroveishev, A. V.

Journal:

Year:

2016

Language:

english

File:

PDF, 467 KB

english, 2016

20

Morphological stability of the atomically clean surface of silicon (100) crystals after microwave plasma-chemical processing

Yafarov, R. K., Shanygin, V. Ya.

Journal:

Year:

2016

Language:

english

File:

PDF, 226 KB

english, 2016

21

On controlling the electronic states of shallow donors using a finite-size metal gate

E. A. Levchuk,L. F. Makarenko

Journal:

Year:

2016

Language:

english

File:

PDF, 398 KB

english, 2016

22

Polarized photoluminescence ofnc-Si–SiOxnanostructures

E. V. Michailovska,I. Z. Indutnyi,P. E. Shepeliavyi,N. V. Sopinskii

Journal:

Year:

2016

Language:

english

File:

PDF, 316 KB

english, 2016