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Volume 50; Issue 1
Main
Semiconductors
Volume 50; Issue 1
Semiconductors
Volume 50; Issue 1
1
Structure and optical properties of ZnO with silver nanoparticles
Lyadov, N. M.
,
Gumarov, A. I.
,
Kashapov, R. N.
,
Noskov, A. I.
,
Valeev, V. F.
,
Nuzhdin, V. I.
,
Bazarov, V. V.
,
Khaibullin, R. I.
,
Faizrakhmanov, I. A.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 501 KB
Your tags:
english, 2016
2
Vertical heterostructures based on graphene and other 2D materials
Antonova, I. V.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 1.70 MB
Your tags:
english, 2016
3
Formation of graphite/sic structures by the thermal decomposition of silicon carbide
Mynbaeva, M. G.
,
Lavrent’ev, A. A.
,
Mynbaev, K. D.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 541 KB
Your tags:
english, 2016
4
On the complex structure of the optical spectra of a tetragonal calomel single crystal in a wide energy range
Sobolev, V. V.
,
Sobolev, V. Val.
,
Anisimov, D. V.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 436 KB
Your tags:
english, 2016
5
Photodetectors based on CuInS2
Bulyarsky, S. V.
,
Vostretsova, L. N.
,
Gavrilov, S. A.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 261 KB
Your tags:
english, 2016
6
Simulation of the β-voltaic effect in siliconpinstructures irradiated with electrons from a nickel-63 β source
Nagornov, Yu. S.
,
Murashev, V. N.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 622 KB
Your tags:
english, 2016
7
Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm
Emelyanov, V. M.
,
Mintairov, S. A.
,
Sorokina, S. V.
,
Khvostikov, V. P.
,
Shvarts, M. Z.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 647 KB
Your tags:
english, 2016
8
Simulation of the characteristics of InGaAs/InP-based photovoltaic laser-power converters
Emelyanov, V. M.
,
Sorokina, S. V.
,
Khvostikov, V. P.
,
Shvarts, M. Z.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 544 KB
Your tags:
english, 2016
9
Organic light-emitting diodes based on a series of new polythienothiophene complexes and highly luminescent quantum dots
Vashchenko, A. A.
,
Goriachiy, D. O.
,
Vitukhnovsky, A. G.
,
Tananaev, P. N.
,
Vasnev, V. A.
,
Rodlovskaya, E. N.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 331 KB
Your tags:
english, 2016
10
Growth, structure, and properties of GaAs-based (GaAs)1–x–y(Ge2)x(ZnSe)yepitaxial films
Zaynabidinov, S. Z.
,
Saidov, A. S.
,
Leiderman, A. Yu.
,
Kalanov, M. U.
,
Usmonov, Sh. N.
,
Rustamova, V. M.
,
Boboev, A. Y.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 320 KB
Your tags:
english, 2016
11
Exciton emission of crystalline Zn(S)Se thin films arranged in microcavities based on amorphous insulating coatings
Kozlovsky, V. I.
,
Krivobok, V. S.
,
Kuznetsov, P. I.
,
Nikolaev, S. N.
,
Onistchenko, E. E.
,
Pruchkina, A. A.
,
Timiryazev, A. G.
,
Chentsov, S. I.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 413 KB
Your tags:
english, 2016
12
Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide
Mikhaylova, A. I.
,
Afanasyev, A. V.
,
Ilyin, V. A.
,
Luchinin, V. V.
,
Sledziewski, T.
,
Reshanov, S. A.
,
Schöner, A.
,
Krieger, M.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 171 KB
Your tags:
english, 2016
13
Erratum to: “Vacancies in Epitaxial Graphene”
Davydov, S. Yu.
Journal:
Semiconductors
Year:
2016
File:
PDF, 78 KB
Your tags:
2016
14
Mechanisms of the degradation of Schottky-barrier photodiodes based on ZnS single crystals
Korsunska, N. E.
,
Shulga, E. P.
,
Stara, T. R.
,
Litvin, P. M.
,
Bondarenko, V. A.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 361 KB
Your tags:
english, 2016
15
Optical properties of PbS thin films
Akhmedov, O. R.
,
Guseinaliyev, M. G.
,
Abdullaev, N. A.
,
Abdullaev, N. M.
,
Babaev, S. S.
,
Kasumov, N. A.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 307 KB
Your tags:
english, 2016
16
On the preparation and photoelectric properties of Tl1–xIn1–xSnxSe2(x= 0.1–0.25) alloys
Danylchuk, S. P.
,
Myronchuk, G. L.
,
Mozolyuk, M. Yu.
,
Bozhko, V. V.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 380 KB
Your tags:
english, 2016
17
On the specific electrophysical properties ofn-InSe single crystals
Abdinov, A. Sh.
,
Babaeva, R. F.
,
Rzaev, R. M.
,
Ragimova, N. A.
,
Amirova, S. I.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 214 KB
Your tags:
english, 2016
18
Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry
Makeev, M. O.
,
Ivanov, Y. A.
,
Meshkov, S. A.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 683 KB
Your tags:
english, 2016
19
Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer
Rykov, A. V.
,
Dorokhin, M. V.
,
Malysheva, E. I.
,
Demina, P. B.
,
Vikhrova, O. V.
,
Zdoroveishev, A. V.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 467 KB
Your tags:
english, 2016
20
Morphological stability of the atomically clean surface of silicon (100) crystals after microwave plasma-chemical processing
Yafarov, R. K.
,
Shanygin, V. Ya.
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 226 KB
Your tags:
english, 2016
21
On controlling the electronic states of shallow donors using a finite-size metal gate
E. A. Levchuk,L. F. Makarenko
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 398 KB
Your tags:
english, 2016
22
Polarized photoluminescence ofnc-Si–SiOxnanostructures
E. V. Michailovska,I. Z. Indutnyi,P. E. Shepeliavyi,N. V. Sopinskii
Journal:
Semiconductors
Year:
2016
Language:
english
File:
PDF, 316 KB
Your tags:
english, 2016
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