Design and Simulation of GaSb/InAs 2D Transmission-Enhanced...

IEEE Electron Device Letters 2016 / 1 Vol. 37; Iss. 1

Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs

Long, Pengyu, Wilson, Evan, Huang, Jun Z., Klimeck, Gerhard, Rodwell, Mark J. W., Povolotskyi, Michael
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Volume:
37
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2497666
Date:
January, 2016
File:
PDF, 1.29 MB
english, 2016
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