Oxide precipitates in annealed nitrogen-doped...

Materials Science in Semiconductor Processing 2002 Vol. 5; Iss. 4-5

Oxide precipitates in annealed nitrogen-doped 300 mm CZ-SI

V.D. Akhmetov, H. Richter, O. Lysytskiy, R. Wahlich, T. Müller
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Volume:
5
Year:
2002
Language:
english
Pages:
6
DOI:
10.1016/s1369-8001(02)00136-1
File:
PDF, 431 KB
english, 2002
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