Volume 5; Issue 4-5

Main
Materials Science in Semiconductor Processing
Volume 5; Issue 4-5

Materials Science in Semiconductor Processing

Volume 5; Issue 4-5

1

E-MRS Spring Meeting 2002. The 300 mm Silicon Era: Material, Equipment, Technology

H. Richter, M. Umeno, P. Wagner

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 40 KB

english, 2002

2

Analysis of localized vibration of nitrogen complexes in CZ silicon

I Okubo, H Harada, T Mikayama, D Funao, N Inoue

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 431 KB

english, 2002

3

Effect of vacancies on nucleation of oxide precipitates in silicon

V.V. Voronkov, R. Falster

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 115 KB

english, 2002

4

Systematic study of the influence of the Czochralski hot zone design on the point defect distribution with respect to a “perfect” crystal

M Krause, J Friedrich, G Müller

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 203 KB

english, 2002

5

Mechanical properties of nitrogen-doped CZ silicon crystals

V Orlov, H Richter, A Fischer, J Reif, T Müller, R Wahlich

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 596 KB

english, 2002

6

On the impact of nanotopography of silicon wafers on post-CMP oxide layers

R Schmolke, R Deters, P Thieme, R Pech, H Schwenk, G Diakourakis

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 532 KB

english, 2002

7

Silicon melt convection in large size Czochralski crucibles

J. Virbulis, Th. Wetzel, E. Tomzig, W. von Ammon

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 315 KB

english, 2002

8

Physical failure analysis in semiconductor industry—challenges of the copper interconnect process

Ehrenfried Zschech, Eckhard Langer, Hans-Juergen Engelmann, Kornelia Dittmar

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 1.34 MB

english, 2002

9

Doubleside polishing—a technology mandatory for 300 mm wafer manufacturing

G Wenski, T Altmann, W Winkler, G Heier, G Hölker

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 533 KB

english, 2002

10

Impact of filtering on nanotopography measurement of 300 mm silicon wafers

F Riedel, H.-A Gerber, P Wagner

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 299 KB

english, 2002

11

Praseodymium oxide growth on Si(1 0 0) by pulsed-laser deposition

D. Wolfframm, M. Ratzke, S. Kouteva-Arguirova, J. Reif

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 578 KB

english, 2002

12

Dislocation behavior in heavily germanium-doped silicon crystal

Toshinori Taishi, Xinming Huang, Ichiro Yonenaga, Keigo Hoshikawa

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 228 KB

english, 2002

13

Internal linear inductively coupled plasma (ICP) sources for large area FPD etch process applications

Y.J. Lee, K.N. Kim, B.K. Song, G.Y. Yeom

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 250 KB

english, 2002

14

X-ray characterization of crystal perfection and surface contamination in large-diameter silicon wafers

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 787 KB

english, 2002

15

Future roadblocks and solutions in silicon technology as outlined by the ITRS roadmap

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 271 KB

english, 2002

16

Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection

V.V. Kalaev, D.P. Lukanin, V.A. Zabelin, Yu.N. Makarov, J. Virbulis, E. Dornberger, W. von Ammon

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 377 KB

english, 2002

17

New challenges for 300 mm Si technology: 3D interconnects at wafer scale by aligned wafer bonding

V. Dragoi, P. Lindner, M. Tischler, C. Schaefer

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 281 KB

english, 2002

18

Application of dynamic and combined magnetic fields in the 300 mm silicon single-crystal growth

Erich Tomzig, Janis Virbulis, Wilfried von Ammon, Yuri Gelfgat, Leonid Gorbunov

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 338 KB

english, 2002

19

Active control of melt convection of silicon by electromagnetic force under cusp-shaped magnetic fields

Koichi Kakimoto, Akimasa Tashiro, Hideo Ishii, Takashige Shinozaki

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 585 KB

english, 2002

20

Oxide precipitates in annealed nitrogen-doped 300 mm CZ-SI

V.D. Akhmetov, H. Richter, O. Lysytskiy, R. Wahlich, T. Müller

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 431 KB

english, 2002

21

Defect requirements for advanced 300 mm DRAM substrates

C Kupfer, H Roth, H Dietrich

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 616 KB

english, 2002

22

Photoelastic stress evaluation and defect monitoring in 300-mm-wafer manufacturing

H.D Geiler, M Wagner, H Karge, M Paulsen, R Schmolke

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 3.49 MB

english, 2002

23

A roadmap towards cost efficient 300 mm equipment

Lothar Pfitzner, Peter Kücher

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 988 KB

english, 2002

24

From overall equipment efficiency (OEE) to overall Fab effectiveness (OFE)

Richard Oechsner, Markus Pfeffer, Lothar Pfitzner, Harald Binder, Eckhard Müller, Thomas Vonderstrass

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 626 KB

english, 2002

25

IFC-ED board

Journal:

Materials Science in Semiconductor Processing

Year:

2002

Language:

english

File:

PDF, 72 KB

english, 2002