Physical understanding of trends in current collapse with...

Semiconductor Science and Technology 2016 / 03 Vol. 31; Iss. 3

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

Ramanan, Narayanan, Lee, Bongmook, Misra, Veena
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Volume:
31
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/31/3/035016
Date:
March, 2016
File:
PDF, 636 KB
english, 2016
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