Volume 31; Issue 3

Semiconductor Science and Technology

Volume 31; Issue 3

1

Investigation of light doping and hetero gate dielectric carbon nanotube tunneling field-effect transistor for improved device and circuit-level performance

Wang, Wei, Sun, Yuan, Wang, Huan, Xu, Hongsong, Xu, Min, Jiang, Sitao, Yue, Gongshu

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.70 MB

english, 2016

2

Suppression of extended defects propagation in a laser diodes structure grown on (20-21) GaN

Marona, Lucja, Smalc-Koziorowska, Julita, Grzanka, Ewa, Sarzynski, Marcin, Suski, Tadek, Schiavon, Dario, Czernecki, Robert, Perlin, Piotr, Kucharski, Robert, Domagala, Jaroslaw

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.96 MB

english, 2016

3

Recent progress in Ga 2 O 3 power devices

Higashiwaki, Masataka, Sasaki, Kohei, Murakami, Hisashi, Kumagai, Yoshinao, Koukitu, Akinori, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 2.62 MB

english, 2016

4

Special issue on wide-bandgap semiconductor power electronics

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 137 KB

english, 2016

5

Physics of dynamic threshold voltage and steep subthreshold swing in Al 2 O 3 –InAlN–GaN MOSHEMTs

Zhou, Q, Wang, Z H, Zhou, X Y, Zhang, A B, Shi, Y Y, Liu, L, Wang, Y G, Fang, Y L, Lv, Y J, Feng, Z H, Zhang, B

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 951 KB

english, 2016

6

Observation of 8600 K electron temperature in AlGaN/GaN high electron mobility transistors on Si substrate

Narita, Tomotaka, Fujimoto, Yuichi, Wakejima, Akio, Egawa, Takashi

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 572 KB

english, 2016

7

TM/TE polarization tuning and switching in tensile strained p-AlGaAs/GaAsP/ n -AlGaAs heterostructures by uniaxial compression

Bogdanov, E V, Kissel, H, Kolokolov, K I, Minina, N Ya

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1001 KB

english, 2016

8

Nanogroove control of intersubband absorption in AlGaAs/GaAs step quantum wells

Liu, Dongfeng, Cheng, Yu, He, JiaFeng

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 624 KB

english, 2016

9

Analysis of the current path for a vertical NAND flash cell with program/erase states

Kang, Daewoong, Kim, Hyoungsoo, Ali, Asif, Yoon, Youngchang, Cho, Il Hwan

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 2.24 MB

english, 2016

10

Medium-energy ion irradiation of Si and Ge wafers: studies of surface nanopatterning and signature of recrystallization in 100 keV Kr + bombarded a-Si

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.88 MB

english, 2016

11

Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors

Zhang, Jiaqi, Wang, Lei, Wang, Qingpeng, Jiang, Ying, Li, Liuan, Zhu, Huichao, Ao, Jin-Ping

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.33 MB

english, 2016

12

Structure, morphology, optical and magnetic response of ZnO, Mn 3 O 4 and doped Zn 0.5 Mn 0.5 O nanoparticles as-synthesized using a chemical co-precipitation method

Varshney, Dinesh, Dwivedi, Sonam

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.52 MB

english, 2016

13

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

Ramanan, Narayanan, Lee, Bongmook, Misra, Veena

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 636 KB

english, 2016

14

InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study

D’Costa, Vijay Richard, Loke, Wan Khai, Zhou, Qian, Yoon, Soon Fatt, Yeo, Yee-Chia

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.10 MB

english, 2016

15

Analysis of the scattering mechanisms controlling electron mobility in β -Ga 2 O 3 crystals

Parisini, Antonella, Fornari, Roberto

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 743 KB

english, 2016

16

Electrically controlled spin-transistor operation in a helical magnetic field

Wójcik, P, Adamowski, J

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 986 KB

english, 2016

17

Strain- and temperature-induced effects in AlGaN/GaN high electron mobility transistors

Yalamarthy, Ananth Saran, Senesky, Debbie G

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 693 KB

english, 2016

18

Impact of a boron rich layer on minority carrier lifetime degradation in boron spin-on dopant diffused n -type crystalline silicon solar cells

Singha, Bandana, Solanki, Chetan Singh

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.82 MB

english, 2016

19

Improvement of device isolation using field implantation for GaN MOSFETs

Jiang, Ying, Wang, Qingpeng, Zhang, Fuzhe, Li, Liuan, Shinkai, Satoko, Wang, Dejun, Ao, Jin-Ping

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 2.76 MB

english, 2016

20

Small-signal transient response and turn-on delay of polariton laser diodes

Butté, Raphaël

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.43 MB

english, 2016

21

Electrical mechanisms for carrier compensation in homoepitaxial nonpolar m-ZnO doped with nitrogen

Kurtz, A, Hierro, A, Lopez-Ponce, M, Tabares, G, Chauveau, J M

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.09 MB

english, 2016

22

Practical applications of SiC-MOSFETs and further developments

Furuhashi, Masayuki, Tomohisa, Shingo, Kuroiwa, Takeharu, Yamakawa, Satoshi

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.50 MB

english, 2016

23

Excellent optical quality versus strong grain boundary effect in a double-layer ZnO structure

Wu, Bin, Zhuang, Shi-Wei, Chi, Chen, Shi, Zhi-Feng, Jiang, Jun-Yan, Chu, Xian-Wei, Dong, Xin, Li, Wan-Cheng, Li, Guo-Xing, Zhang, Yuan-Tao, Zhang, Bao-Lin, Du, Guo-Tong

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 2.34 MB

english, 2016

24

Theory of $\vec{k}\cdot \vec{\pi }$ electronic structure and some related properties of ZnO

Shadangi, S K, Tripathi, G S

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 571 KB

english, 2016

25

Formation of helical dislocations in ammonothermal GaN substrate by heat treatment

Horibuchi, Kayo, Yamaguchi, Satoshi, Kimoto, Yasuji, Nishikawa, Koichi, Kachi, Tetsu

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 2.45 MB

english, 2016

26

Study of surface recombination on cleaved and passivated edges of Si detectors

Gaubas, E, Ceponis, T, Vaitkus, J V, Fadeyev, V, Ely, S, Galloway, Z, Sadrozinski, H F-W, Christophersen, M, Phlips, B F, Gorelov, I, Hoeferkamp, M, Metcalfe, J, Seidel, S

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.24 MB

english, 2016

27

Influence of temperature on transit times and microwave noise performances of SiGe HBT

Diaz-Albarran, L M, Ramirez-Garcia, E, Zerounian, N, Aniel, F, Rodriguez-Mendez, L M, Valdez-Perez, D, Galaz-Larios, M C, Enciso-Aguilar, M A

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 647 KB

english, 2016

28

Investigation of trap levels in HgCdTe IR detectors through low frequency noise spectroscopy

Ciura, L, Kolek, A, Kębłowski, A, Stanaszek, D, Piotrowski, A, Gawron, W, Piotrowski, J

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 2.39 MB

english, 2016

29

LWIR HgCdTe barrier photodiode with Auger-suppression

Kopytko, M, Kębłowski, A, Gawron, W, Pusz, W

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.50 MB

english, 2016

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