Study of device parameters for analog IC design in a 1.2 mu...

IEEE Transactions on Nuclear Science 1992 / Dec. Vol. 39; Iss. 6

Study of device parameters for analog IC design in a 1.2 mu m CMOS-SOI technology after 10 Mrad (for hadron colliders)

Faccio, F., Heijne, E.H.M., Jarron, P., Glaser, M., Rossi, G., Avrillon, S., Borel, G.
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Volume:
39
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.211361
Date:
January, 1992
File:
PDF, 652 KB
english, 1992
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