Improved Performance of Amorphous InGaZnO Thin-Film...

IEEE Transactions on Device and Materials Reliability 2014 / 12 Vol. 14; Iss. 4

Improved Performance of Amorphous InGaZnO Thin-Film Transistor With $\hbox{Ta}_{2}\hbox{O}_{5}$ Gate Dielectric by Using La Incorporation

Qian, L. X., Liu, X. Z., Han, C. Y., Lai, P. T.
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Volume:
14
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2014.2365702
Date:
December, 2014
File:
PDF, 744 KB
english, 2014
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