Interface properties of Al–Al2O3–Ge MIS capacitors and the effect of forming gas annealing
Ioannou-Sougleridis, V., Karageorgiou, A., Barlas, M., Ladas, S., Skarlatos, D.Volume:
159
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2016.02.064
Date:
June, 2016
File:
PDF, 2.38 MB
english, 2016