Electrical mechanisms for carrier compensation in...

Semiconductor Science and Technology 2016 / 03 Vol. 31; Iss. 3

Electrical mechanisms for carrier compensation in homoepitaxial nonpolar m-ZnO doped with nitrogen

Kurtz, A, Hierro, A, Lopez-Ponce, M, Tabares, G, Chauveau, J M
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Volume:
31
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/31/3/035010
Date:
March, 2016
File:
PDF, 1.09 MB
english, 2016
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