Resistive switching characteristics in hafnium oxide,...

Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices

Park, Mi Ra, Abbas, Yawar, Abbas, Haider, Hu, Quanli, Lee, Tae Sung, Choi, Young Jin, Yoon, Tae-Sik, Lee, Hyun-Ho, Kang, Chi Jung
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Volume:
159
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2016.03.043
Date:
June, 2016
File:
PDF, 619 KB
english, 2016
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