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Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices
Park, Mi Ra, Abbas, Yawar, Abbas, Haider, Hu, Quanli, Lee, Tae Sung, Choi, Young Jin, Yoon, Tae-Sik, Lee, Hyun-Ho, Kang, Chi JungVolume:
159
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2016.03.043
Date:
June, 2016
File:
PDF, 619 KB
english, 2016