Study of hot electrons in AlGaN/GaN HEMTs under RF Class B...

Microelectronics Reliability 2015 / 12 Vol. 55; Iss. 12

Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence

Brazzini, Tommaso, Casbon, Michael A., Sun, Huarui, Uren, Michael J., Lees, Jonathan, Tasker, Paul J., Jung, Helmut, Blanck, Hervé, Kuball, Martin
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Volume:
55
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2015.09.023
Date:
December, 2015
File:
PDF, 1.25 MB
english, 2015
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