Effect of gate-length shortening on the terahertz...

Solid-State Electronics 2015 / 12 Vol. 114

Effect of gate-length shortening on the terahertz small-signal and self-oscillations characteristics of field-effect transistors

Starikov, E., Shiktorov, P., Gružinskis, V., Marinchio, H., Palermo, C., Varani, L.
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Volume:
114
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2015.09.012
Date:
December, 2015
File:
PDF, 710 KB
english, 2015
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