Volume 114

Solid-State Electronics

Volume 114

1

Pickup impact on high-voltage multifinger LDMOS–SCR with low trigger voltage and high failure current

Yang, Liu, Jin, Xiangliang, Wang, Yang, Zhou, Acheng

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.08 MB

english, 2015

2

Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics

Di Lecce, Valerio, Grassi, Roberto, Gnudi, Antonio, Gnani, Elena, Reggiani, Susanna, Baccarani, Giorgio

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 904 KB

english, 2015

3

On the simulation and analytical modeling of on-state DC characteristics of Silicon Carbide Double-implanted MOSFETs

Jaikumar, M.G., Rao, R. Ramakrishna, Karmalkar, Shreepad

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.42 MB

english, 2015

4

Simulation study of the electron mobility in few-layer MoS2 metal–insulator-semiconductor field-effect transistors

Gonzalez-Medina, J.M., Ruiz, F.G., Marin, E.G., Godoy, A., Gámiz, F.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 613 KB

english, 2015

5

Evaluation and optimization of short channel ferroelectric MOSFET for low power circuit application with BSIM4 and Landau theory

Li, Yang, Lian, Yong, Yao, Kui, Samudra, Ganesh S.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 551 KB

english, 2015

6

Array-level stability enhancement of 50nm AlxOy ReRAM

Iwasaki, Tomoko Ogura, Ning, Sheyang, Yamazawa, Hiroki, Takeuchi, Ken

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.13 MB

english, 2015

7

Hole injection and dielectric breakdown in 6H–SiC and 4H–SiC metal–oxide–semiconductor structures during substrate electron injection via Fowler–Nordheim tunneling

Samanta, Piyas, Mandal, Krishna C.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.73 MB

english, 2015

8

A comparative study of lateral SiCN/porous silicon and vertical SiCN/porous silicon junctions for sensing ultraviolet light

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 903 KB

english, 2015

9

Accurate analytical approximation of the OTFTs surface potential by means of the Lagrange Reversion Theorem

Colalongo, Luigi, Ghittorelli, Matteo, Torricelli, Fabrizio, Kovács-Vajna, Zsolt Miklos

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 379 KB

english, 2015

10

Correlated noise in bipolar transistors: Model implementation issues

Huszka, Zoltan, Chakravorty, Anjan

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 792 KB

english, 2015

11

A bottom-gate silicon nanowire field-effect transistor with functionalized palladium nanoparticles for hydrogen gas sensors

Choi, Bongsik, Ahn, Jae-Hyuk, Lee, Jieun, Yoon, Jinsu, Lee, Juhee, Jeon, Minsu, Kim, Dong Myong, Kim, Dae Hwan, Park, Inkyu, Choi, Sung-Jin

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 978 KB

english, 2015

12

Gradual bipolar resistive switching in Ni/Si3N4/n+-Si resistive-switching memory device for high-density integration and low-power applications

Kim, Sungjun, Jung, Sunghun, Kim, Min-Hwi, Cho, Seongjae, Park, Byung-Gook

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 675 KB

english, 2015

13

Calculating drain delay in high electron mobility transistors

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 594 KB

english, 2015

14

A modified capacitance model of RF MEMS shunt switch incorporating fringing field effects of perforated beam

Guha, Koushik, Kumar, Mithlesh, Agarwal, Saurabh, Baishya, Srimanta

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.71 MB

english, 2015

15

Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

Kim, Choong-Ki, Ahn, Hyun Jun, Moon, Jung Min, Lee, Sukwon, Moon, Dong-II, Park, Jeong Soo, Cho, Byung-Jin, Choi, Yang-Kyu, Lee, Seok-Hee

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.10 MB

english, 2015

16

Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices

Huang, Huolin, Liang, Yung Chii

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 2.09 MB

english, 2015

17

Electrically tunable spectral responsivity in metal–semiconductor–metal photodetectors based on low-dimensional ZnCdS/ZnMgS/GaP, ZnCdS/ZnS/GaP heterostructures

Averin, S.V., Kuznetsov, P.I., Zhitov, V.A., Zakharov, L.Yu., Kotov, V.M., Alkeev, N.V.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 982 KB

english, 2015

18

Improved modeling on the RF behavior of InAs/AlSb HEMTs

Guan, He, Lv, Hongliang, Zhang, Yuming, Zhang, Yimen

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 2.10 MB

english, 2015

19

The reliability study of III–V solar cell with copper based contacts

Hsu, Ching-Hsiang, Chang, Edward Yi, Chang, Hsun-Jui, Maa, Jer-Shen, Pande, Krishna

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 890 KB

english, 2015

20

A novel area-efficiency multi-finger GGnMOS with high ESD robustness

Zhang, Chunwei, Liu, Siyang, Sun, Weifeng, Shi, Longxing

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 667 KB

english, 2015

21

Fowler–Nordheim electron tunneling mechanism in Ni/SiO2/n-4H SiC MOS devices

Kodigala, Subba Ramaiah, Chattopadhyay, S., Overton, C., Ardoin, I.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.88 MB

english, 2015

22

High efficiency yellow organic light-emitting diodes with optimized barrier layers

Mu, Ye, Zhang, Shiming, Yue, Shouzhen, Wu, Qingyang, Zhao, Yi

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 987 KB

english, 2015

23

Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system

Mun, Jae-Kyoung, Oh, Jung-Hun, Sung, Ho-Kun, Wang, Cong

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 3.18 MB

english, 2015

24

The impact of gate to drain spacing on hot-carrier degradation in sub-100nm Ni–Pt salicidation FinFETs

Lee, Seung Min, Lee, Hi-Deok, Ok, Injo, Oh, Jungwoo

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.22 MB

english, 2015

25

Random telegraph signal transients in active logarithmic continuous-time vision sensors

Pardo, Fernando, Boluda, Jose A., Vegara, Francisco

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 371 KB

english, 2015

26

Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22nm node pMOSFETs

Wang, Guilei, Moeen, M., Abedin, A., Xu, Yefeng, Luo, Jun, Guo, Yiluan, Qin, Changliang, Tang, Zhaoyun, Yin, Haizhou, Li, Junfeng, Yan, Jiang, Zhu, Huilong, Zhao, Chao, Chen, Dapeng, Ye, Tianchun, Kol

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.33 MB

english, 2015

27

Effect of gate-length shortening on the terahertz small-signal and self-oscillations characteristics of field-effect transistors

Starikov, E., Shiktorov, P., Gružinskis, V., Marinchio, H., Palermo, C., Varani, L.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 710 KB

english, 2015

28

Maximizing the value of gate capacitance in field-effect devices using an organic interface layer

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 767 KB

english, 2015

29

Editorial Board

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 55 KB

english, 2015

30

Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn

Zhang, Xu, Zhang, Dongliang, Zheng, Jun, Liu, Zhi, He, Chao, Xue, Chunlai, Zhang, Guangze, Li, Chuanbo, Cheng, Buwen, Wang, Qiming

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.13 MB

english, 2015

31

Depletion length in semiconductor nanostructures with spherical symmetry

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 280 KB

english, 2015

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