Characterization of p-GaN...

Semiconductor Science and Technology 2016 / 06 Vol. 31; Iss. 6

Characterization of p-GaN 1− x As x /n-GaN PN junction diodes

Qian, H, Lee, K B, Vajargah, S Hosseini, Novikov, S V, Guiney, I, Zhang, S, Zaidi, Z H, Jiang, S, Wallis, D J, Foxon, C T, Humphreys, C J, Houston, P A
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Volume:
31
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/31/6/065020
Date:
June, 2016
File:
PDF, 1.81 MB
english, 2016
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