Volume 31; Issue 6

Semiconductor Science and Technology

Volume 31; Issue 6

1

Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors

Zervos, Ch, Adikimenakis, A, Bairamis, A, Kostopoulos, A, Kayambaki, M, Tsagaraki, K, Konstantinidis, G, Georgakilas, A

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.48 MB

english, 2016

2

Preparation of p-type Na-doped Cu 2 O by electrodeposition for a p-n homojunction thin film solar cell

Elfadill, Nezar G, Hashim, M R, Chahrour, Khaled M, Mohammed, S A

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.67 MB

english, 2016

3

Sidewall spacer optimization for steep switching junctionless transistors

Gupta, Manish, Kranti, Abhinav

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.53 MB

english, 2016

4

Chlorine-based dry etching of β -Ga 2 O 3

Hogan, Jack E, Kaun, Stephen W, Ahmadi, Elaheh, Oshima, Yuichi, Speck, James S

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.06 MB

english, 2016

5

Analytical band Monte Carlo analysis of electron transport in silicene

Yeoh, K H, Ong, D S, Ooi, C H Raymond, Yong, T K, Lim, S K

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 873 KB

english, 2016

6

The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures

Jahn, U, Musolino, M, Lähnemann, J, Dogan, P, Garrido, S Fernández, Wang, J F, Xu, K, Cai, D, Bian, L F, Gong, X J, Yang, H

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 2.54 MB

english, 2016

7

Assessing the thermoelectric properties of single InSb nanowires: the role of thermal contact resistance

Yazji, S, Swinkels, M Y, De Luca, M, Hoffmann, E A, Ercolani, D, Roddaro, S, Abstreiter, G, Sorba, L, Bakkers, E P A M, Zardo, I

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 648 KB

english, 2016

8

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

Ielmini, Daniele

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 4.92 MB

english, 2016

9

Characterization of p-GaN 1− x As x /n-GaN PN junction diodes

Qian, H, Lee, K B, Vajargah, S Hosseini, Novikov, S V, Guiney, I, Zhang, S, Zaidi, Z H, Jiang, S, Wallis, D J, Foxon, C T, Humphreys, C J, Houston, P A

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.81 MB

english, 2016

10

Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiN x /AlGaN/GaN metal-insulator-semiconductor structure

Bao, Qilong, Huang, Sen, Wang, Xinhua, Wei, Ke, Zheng, Yingkui, Li, Yankui, Yang, Chengyue, Jiang, Haojie, Li, Junfeng, Hu, Anqi, Yang, Xuelin, Shen, Bo, Liu, Xinyu, Zhao, Chao

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 907 KB

english, 2016

11

Design considerations of biaxially tensile-strained germanium-on-silicon lasers

Li, Xiyue, Li, Zhiqiang, Li, Simon, Chrostowski, Lukas, Xia, Guangrui (Maggie)

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.71 MB

english, 2016

12

The contact and photoconductivity characteristics between Co doped amorphous carbon and GaAs: n-type low-resistivity and semi-insulated high-resistivity GaAs

Zhai, Zhangyin, Yu, Hualing, Zuo, Fen, Guo, Chunlian, Chen, Guibin, Zhang, Fengming, Wu, Xiaoshan, Gao, Ju

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.17 MB

english, 2016

13

Antimony selenide thin-film solar cells

Zeng, Kai, Xue, Ding-Jiang, Tang, Jiang

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 3.08 MB

english, 2016

14

Modelling of interband transitions in GaAs tunnel diode

Louarn, K, Fontaine, C, Arnoult, A, Olivié, F, Lacoste, G, Piquemal, F, Bounouh, A, Almuneau, G

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1013 KB

english, 2016

15

Coplanar metal–semiconductor–metal light-emitting devices with an n++ InGaN layer and their application to display

Long, H, Zeng, Y P, Mei, Y, Ying, L Y, Zhang, B P

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.28 MB

english, 2016

16

High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

Chan, Silvia H, Keller, Stacia, Tahhan, Maher, Li, Haoran, Romanczyk, Brian, DenBaars, Steven P, Mishra, Umesh K

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.62 MB

english, 2016

17

Technology of integrated self-aligned E/D-mode n ++ GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics

Blaho, M, Gregušová, D, Haščík, Š, Seifertová, A, Ťapajna, M, Šoltýs, J, Šatka, A, Nagy, L, Chvála, A, Marek, J, Carlin, J-F, Grandjean, N, Konstantinidis, G, Kuzmík, J

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 657 KB

english, 2016

18

N-type ohmic contacts to undoped GaAs/AlGaAs quantum wells using only front-sided processing: application to ambipolar FETs

Taneja, D, Sfigakis, F, Croxall, A F, Gupta, K Das, Narayan, V, Waldie, J, Farrer, I, Ritchie, D A

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.22 MB

english, 2016

19

Estimation of frequency conversion efficiency of THz devices using a ballistic electron wave swing circuit model

Schildbach, Christian, Ong, Duu Sheng, Hartnagel, Hans, Schmidt, Lorenz-Peter

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 2.02 MB

english, 2016

20

Defect energy levels in p-type GaAsBi and GaAs grown by MBE at low temperatures

Mooney, P M, Tarun, M C, Bahrami-Yekta, V, Tiedje, T, Lewis, R B, Masnadi-Shirazi, M

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 759 KB

english, 2016

21

Growth and characterization of α -phase Ga 2− x Sn x O 3 thin films for solar-blind ultraviolet applications

Zhao, Xiaolong, Wu, Zhenping, Guo, Daoyou, Cui, Wei, Li, Peigang, An, Yuehua, Li, Linghong, Tang, Weihua

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.07 MB

english, 2016

22

A theoretical study of charge-transport parameters for a hydrogen-bonded organic semiconductor: the indigo and s-indaceno [1,2-b:5,6-b′] dithiophene-4,9-dione derivatives

Wei (魏慧玲), Hui-Ling, Shi (时雅瑞), Ya-Rui, Liu (刘玉芳), Yu-Fang

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.76 MB

english, 2016

23

Compact-device model development for the energy-delay analysis of magneto-electric magnetic tunnel junction structures

Sharma, N, Bird, J P, Dowben, P A, Marshall, A

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 705 KB

english, 2016

24

Anomalous capacitance in temperature and frequency characteristics of a TiW/ p -InP Schottky barrier diode

Wang, Qingsong, Chen, Jun, Tang, Hengjing, Li, Xue

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 839 KB

english, 2016

25

Understanding the effects of TCO work function on the performance of organic solar cells by numerical simulation

Chen, Aqing, Zhu, Kaigui, Shao, Qingyi, Ji, Zhenguo

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 828 KB

english, 2016

26

A new modeling and simulation method for important statistical performance prediction of single photon avalanche diode detectors

Xu, Yue, Xiang, Ping, Xie, Xiaopeng, Huang, Yang

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 940 KB

english, 2016

27

Erratum: Electron channeling in TiO 2 coated Cu layers (2016 Semiconductor Science and Technology 31 055005)

Zheng, Pengyuan, Zhou, Tianji, Gall, Daniel

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 340 KB

english, 2016

28

Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations

García, S, Íñiguez-de-la-Torre, I, Mateos, J, González, T, Pérez, S

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.41 MB

english, 2016

29

Photoluminescence fatigue and inhomogeneous line broadening in semi-insulating Tl 6 SeI 4 single crystals

Kostina, S S, Peters, J A, Lin, W, Chen, P, Liu, Z, Wang, P L, Kanatzidis, M G, Wessels, B W

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.74 MB

english, 2016

30

Composition measurement of epitaxial Sc x Ga 1− x N films

Tsui, H C L, Goff, L E, Barradas, N P, Alves, E, Pereira, S, Palgrave, R G, Davies, R J, Beere, H E, Farrer, I, Ritchie, D A, Moram, M A

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 978 KB

english, 2016

31

Investigation of the induced gate noise of nanoscale MOSFETs in the very high frequency region

Jeon, Jongwook, Kim, Yoon, Kang, Myounggon

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 1.23 MB

english, 2016