La2O3 gate dielectrics for AlGaN/GaN HEMT

Microelectronics Reliability 2016 / 05 Vol. 60

La2O3 gate dielectrics for AlGaN/GaN HEMT

Chen, J., Kawanago, T., Wakabayashi, H., Tsutsui, K., Iwai, H., Nohata, D., Nohira, H., Kakushima, K.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
60
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2016.02.004
Date:
May, 2016
File:
PDF, 765 KB
english, 2016
Conversion to is in progress
Conversion to is failed