In depth characterization of electron transport in 14nm...

Solid-State Electronics 2015 / 10 Vol. 112

In depth characterization of electron transport in 14nm FD-SOI CMOS devices

Shin, Minju, Shi, Ming, Mouis, Mireille, Cros, Antoine, Josse, Emmanuel, Kim, Gyu-Tae, Ghibaudo, Gérard
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Volume:
112
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2015.02.012
Date:
October, 2015
File:
PDF, 986 KB
english, 2015
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