Volume 112

Solid-State Electronics

Volume 112

1

Future of nano CMOS technology

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 3.95 MB

english, 2015

2

Role of the gate in ballistic nanowire SOI MOSFETs

Mangla, A., Sallese, J.-M., Sampedro, C., Gamiz, F., Enz, C.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 683 KB

english, 2015

3

Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy

Achour, H., Cretu, B., Simoen, E., Routoure, J.-M., Carin, R., Benfdila, A., Aoulaiche, M., Claeys, C.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 713 KB

english, 2015

4

Consistent low-field mobility modeling for advanced MOS devices

Stanojević, Zlatan, Baumgartner, Oskar, Filipović, Lidija, Kosina, Hans, Karner, Markus, Kernstock, Christian, Prause, Philipp

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.66 MB

english, 2015

5

Electron mobility and spin lifetime enhancement in strained ultra-thin silicon films

Osintsev, Dmitri, Sverdlov, Viktor, Selberherr, Siegfried

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 868 KB

english, 2015

6

Trigate nanowire MOSFETs analog figures of merit

Kilchytska, V., Makovejev, S., Barraud, S., Poiroux, T., Raskin, J.-P., Flandre, D.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.28 MB

english, 2015

7

Mechanical characterization and modelling of Lorentz force based MEMS magnetic field sensors

Gkotsis, P., Lara-Castro, M., López-Huerta, F., Herrera-May, A.L., Raskin, J.-P.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.94 MB

english, 2015

8

Dual Ground Plane for high-voltage MOSFET in UTBB FDSOI technology

Litty, Antoine, Ortolland, Sylvie, Golanski, Dominique, Cristoloveanu, Sorin

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.80 MB

english, 2015

9

Parasitic bipolar effect in ultra-thin FD SOI MOSFETs

Liu, F.Y., Ionica, I., Bawedin, M., Cristoloveanu, S.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.32 MB

english, 2015

10

Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism

Martino, Marcio Dalla Valle, Neves, Felipe, Ghedini Der Agopian, Paula, Martino, João Antonio, Vandooren, Anne, Rooyackers, Rita, Simoen, Eddy, Thean, Aaron, Claeys, Cor

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 899 KB

english, 2015

11

Editorial Board

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 55 KB

english, 2015

12

Enhanced dynamic threshold voltage UTBB SOI nMOSFETs

Sasaki, K.R.A., Manini, M.B., Simoen, E., Claeys, C., Martino, J.A.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 691 KB

english, 2015

13

In depth characterization of electron transport in 14nm FD-SOI CMOS devices

Shin, Minju, Shi, Ming, Mouis, Mireille, Cros, Antoine, Josse, Emmanuel, Kim, Gyu-Tae, Ghibaudo, Gérard

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 986 KB

english, 2015

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