High transconductance AlGaN/GaN-HEMT with recessed gate on...

physica status solidi (a) 2003 Vol. 200; Iss. 1

High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

Hideyuki Okita, Katsuaki Kaifu, Juro Mita, Tomoyuki Yamada, Yoshiaki Sano, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo
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Volume:
200
Year:
2003
Language:
english
Pages:
4
DOI:
10.1002/pssa.200303537
File:
PDF, 113 KB
english, 2003
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