Volume 200; Issue 1

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physica status solidi (a)
Volume 200; Issue 1

physica status solidi (a)

Volume 200; Issue 1

1

High-voltage rf operation of AlGaN/GaN heterojunction FETs

M. Kuzuhara, H. Miyamoto, Y. Ando, T. Inoue, Y. Okamoto, T. Nakayama

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 196 KB

english, 2003

2

High efficiency GaN-based LEDs using plasma selective treatment of p-GaN surface

Young-Bae Lee, Ryohei Takaki, Hisao Sato, Yoshiki Naoi, Shiro Sakai

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 126 KB

english, 2003

3

Influence of the carrier density on the optical gain and refractive index change in InGaN laser structures

M. Röwe, P. Michler, J. Gutowski, V. Kümmler, A. Lell, V. Härle

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 195 KB

english, 2003

4

Characteristics of semi-insulating, Fe-doped GaN substrates

Robert P. Vaudo, Xueping Xu, Allan Salant, Joseph Malcarne, George R. Brandes

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 155 KB

english, 2003

5

GaN-based Single Mirror Light Emitting Diodes with high external quantum efficiency

Christoph M. Zellweger, Julien Dorsaz, Jean-François Carlin, Hans-Jörg Bühlmann, Ross P. Stanley, Marc Ilegems

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 97 KB

english, 2003

6

High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted MBE

M. J. Manfra, N. G. Weimann, O. Mitrofanov, T. Waechtler, D. M. Tennant

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 88 KB

english, 2003

7

Advanced characterization studies of sapphire substrate misorientation effects on GaN-based LED device development

D. Lu, D. I. Florescu, D. S. Lee, V. Merai, A. Parekh, J. C. Ramer, S. P. Guo, E. Armour

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 124 KB

english, 2003

8

Room-temperature operation of GaN-based blue-violet laser diodes fabricated on sapphire substrates using high-temperature-grown single-crystal AlN buffer layers

Yasuo Ohba, Susumu Iida

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 97 KB

english, 2003

9

A novel fabrication method for a 64 × 64 matrix-addressable GaN-based micro-LED array

C.-W. Jeon, H. W. Choi, M. D. Dawson

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 119 KB

english, 2003

10

Bulk GaN crystals grown at high pressure as substrates for blue-laser technology

R. Czernetzki, M. Leszczynski, I. Grzegory, P. Perlin, P. Prystawko, C. Skierbiszewski, M. Krysko, M. Sarzynski, P. Wisniewski, G. Nowak, A. Libura, S. Grzanka, T. Suski, L. Dmowski, E. Litwin-Staszew

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 172 KB

english, 2003

11

Triode-type basic display structure using Si-doped AlN field emitters

Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 110 KB

english, 2003

12

Characterization of GaN based Schottky UV detectors in the vacuum UV (VUV) and the soft X-ray (SX) region (10–100 nm)

Atsushi Motogaito, Hironobu Watanabe, Kazumasa Hiramatsu, Kazutoshi Fukui, Yutaka Hamamura, Kazuyuki Tadatomo

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 65 KB

english, 2003

13

Violet and UV light-emitting diodes grown on ZrB2 substrate

S. Kamiyama, S. Takanami, Y. Tomida, K. Iida, T. Kawashima, S. Fukui, M. Iwaya, H. Kinoshita, T. Matsuda, T. Yasuda, S. Otani, H. Amano, I. Akasaki

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 84 KB

english, 2003

14

Defects in degraded GaN-based laser diodes

Shigetaka Tomiya, Shu Goto, Motonobu Takeya, Masao Ikeda

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 108 KB

english, 2003

15

Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate

Shu Goto, Makoto Ohta, Yoshifumi Yabuki, Yukio Hoshina, Kaori Naganuma, Koshi Tamamura, Toshihiro Hashizu, Masao Ikeda

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 349 KB

english, 2003

16

Recent progress of nitride-based light emitting devices

T. Mukai, S. Nagahama, M. Sano, T. Yanamoto, D. Morita, T. Mitani, Y. Narukawa, S. Yamamoto, I. Niki, M. Yamada, S. Sonobe, S. Shioji, K. Deguchi, T. Naitou, H. Tamaki, Y. Murazaki, M. Kameshima

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 74 KB

english, 2003

17

MBE-growth, characterization and properties of InN and InGaN

Y. Nanishi, Y. Saito, T. Yamaguchi, M. Hori, F. Matsuda, T. Araki, A. Suzuki, T. Miyajima

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 297 KB

english, 2003

18

Effect of well profile on optical and structural properties in InGaN/GaN quantum wells and light emitting diodes

H. W. Shim, E.-K. Suh, C.-H. Hong, Y.-W. Kim, H. J. Lee

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 124 KB

english, 2003

19

Strain-engineered novel III–N electronic devices with high quality dielectric/semiconductor interfaces

M. Asif Khan, M. S. Shur, G. Simin

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 393 KB

english, 2003

20

Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers

U. T. Schwarz, E. Sturm, W. Wegscheider, V. Kümmler, A. Lell, V. Härle

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 204 KB

english, 2003

21

Fast growth of high quality GaN

D. Gogova, H. Larsson, R. Yakimova, Z. Zolnai, I. Ivanov, B. Monemar

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 144 KB

english, 2003

22

AlGaInN violet laser diodes grown on GaN substrates with low aspect ratio

Shigetoshi Ito, Yukio Yamasaki, Susumu Omi, Kunihiro Takatani, Toshiyuki Kawakami, Tomoki Ohno, Masaya Ishida, Yoshihiro Ueta, Takayuki Yuasa, Mototaka Taneya

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 61 KB

english, 2003

23

Ultraviolet InAlGaN multiple-quantum-well laser diodes

Michael Kneissl, David W. Treat, Mark Teepe, Naoko Miyashita, Noble M. Johnson

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 80 KB

english, 2003

24

Over 200 mW on 365 nm ultraviolet light emitting diode of GaN-free structure

Daisuke Morita, Masahiko Sano, Masashi Yamamoto, Mitsuhiro Nonaka, Katsuhiro Yasutomo, Kazuyuki Akaishi, Shin-ichi Nagahama, Takashi Mukai

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 119 KB

english, 2003

25

High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al content of 80%

Yoshitaka Taniyasu, Makoto Kasu, Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 113 KB

english, 2003

26

340–350 nm GaN-free UV-LEDs

T. Nishida, T. Ban, N. Kobayashi

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 111 KB

english, 2003

27

Development of a 2″-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications

R. Kiefer, R. Quay, S. Müller, T. Feltgen, B. Raynor, J. Schleife, K. Köhler, H. Massler, S. Ramberger, F. van Raay, A. Tessmann, M. Mikulla, G. Weimann

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 152 KB

english, 2003

28

Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes

A. Chitnis, V. Adivarahan, J. P. Zhang, M. Shatalov, S. Wu, J. Yang, G. Simin, M. Asif Khan, X. Hu, Q. Fareed, R. Gaska, M. S. Shur

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 107 KB

english, 2003

29

Strong ultraviolet emission from non-polar AlGaN/GaN quantum wells grown over r-plane sapphire substrates

W. H. Sun, E. Kuokstis, M. Gaevski, J. P. Zhang, C. Q. Chen, H. M. Wang, J. W. Yang, G. Simin, M. Asif Khan, R. Gaska, M. S. Shur

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 91 KB

english, 2003

30

GaN-based epitaxy on silicon: stress measurements

A. Krost, A. Dadgar, G. Strassburger, R. Clos

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 1.12 MB

english, 2003

31

Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate

M. Marso, P. Javorka, Y. Dikme, H. Kalisch, J. Bernát, C. Schäfer, B. Schineller, A. v. d. Hart, M. Wolter, A. Fox, R. H. Jansen, M. Heuken, P. Kordoš, H. Lüth

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 81 KB

english, 2003

32

Variation of structural and optical properties across an AlGaN/GaN HEMT structure directly imaged by cathodoluminescence microscopy

F. Bertram, J. Christen, S. Heikman, S. Keller, S. P. DenBaars, U. K. Mishra

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 532 KB

english, 2003

33

Drain current DLTS of AlGaN/GaN HEMTs

T. Mizutani, T. Okino, K. Kawada, Y. Ohno, S. Kishimoto, K. Maezawa

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 122 KB

english, 2003

34

Doping design of GaN-based heterostructure field-effect transistors with high electron density for high-power applications

Narihiko Maeda, Takehiko Tawara, Tadashi Saitoh, Kotaro Tsubaki, Naoki Kobayashi

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 144 KB

english, 2003

35

High-quality quaternary AlInGaN epilayers on sapphire

Yang Liu, Takashi Egawa, Hiroyasu Ishikawa, Takashi Jimbo

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 197 KB

english, 2003

36

High efficiency AlGaInN-based light emitting diode in the 360–380 nm wavelength range

Hisao Sato, Hong-Xing Wang, Daisuke Sato, Ryohei Takaki, Naoki Wada, Tetsuya Tanahashi, Kenji Yamashita, Shunsuke Kawano, Takashi Mizobuchi, Akihiko Dempo, Kenji Morioka, Masahiro Kimura, Suguru Nohda

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 84 KB

english, 2003

37

High performance Schottky UV detectors (265–100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer

H. Miyake, H. Yasukawa, Y. Kida, K. Ohta, Y. Shibata, A. Motogaito, K. Hiramatsu, Y. Ohuchi, K. Tadatomo, Y. Hamamura, K. Fukui

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 110 KB

english, 2003

38

Heat generation and dissipation in GaN-based light emitting devices

Stephan Figge, Tim Böttcher, Detlef Hommel, Christoph Zellweger, Marc Ilegems

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 92 KB

english, 2003

39

High electrostatic discharge protection of InGaN/GaN MQW LEDs by using GaN Schottky diodes

Chin-Hsiang Chen, Shoou-Jinn Chang, Yan-Kuin Su

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 135 KB

english, 2003

40

Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN

M. Iwaya, S. Takanami, A. Miyazaki, T. Kawashima, K. Iida, S. Kamiyama, H. Amano, I. Akasaki

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 86 KB

english, 2003

41

Demonstration of high-efficient InGaN-based violet light-emitting diodes with an external-quantum efficiency of more than 40%

Hiromitsu Kudo, Youichiro Ohuchi, Takahide Jyouichi, Takashi Tsunekawa, Hiroaki Okagawa, Kazuyuki Tadatomo, Yasuhide Sudo, Munehiro Kato, Tsunemasa Taguchi

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 106 KB

english, 2003

42

AlN substrates: fabrication via vapor phase growth and characterization

Yu. Melnik, V. Soukhoveev, V. Ivantsov, V. Sizov, A. Pechnikov, K. Tsvetkov, O. Kovalenkov, V. Dmitriev, A. Nikolaev, N. Kuznetsov, E. Silveira, J. Freitas Jr.

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 215 KB

english, 2003

43

High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

Hideyuki Okita, Katsuaki Kaifu, Juro Mita, Tomoyuki Yamada, Yoshiaki Sano, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 113 KB

english, 2003

44

Fabrication of LED based on III–V nitride and its applications

Naoki Shibata, Toshiya Uemura, Hisao Yamaguchi, Takemasa Yasukawa

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 53 KB

english, 2003

45

Growth of GaN on porous SiC and GaN substrates

C. K. Inoki, T. S. Kuan, A. Sagar, C. D. Lee, R. M. Feenstra, D. D. Koleske, D. J. Diaz, P. W. Bohn, I. Adesida

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 228 KB

english, 2003

46

On the ferroelectricity of Bi–cuprate glass doped with K ions

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 109 KB

english, 2003

47

Yb3+-doped Y3Al5O12 ceramics – A new solid-state laser material

K. Takaichi, H. Yagi, J. Lu, A. Shirakawa, K. Ueda, T. Yanagitani, A. A. Kaminskii

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 70 KB

english, 2003

48

Ultraviolet InAlGaN multiple-quantum-well laser diodes

Michael Kneissl, David W. Treat, Mark Teepe, Naoko Miyashita, Noble M. Johnson

Journal:

physica status solidi (a)

Year:

2003

File:

PDF, 238 KB

2003