Laterally overgrown GaN/InGaN multi-quantum well...

physica status solidi (a) 2010 Vol. 207; Iss. 6

Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties

Alexander Polyakov, Anatoliy Govorkov, Nikolay Smirnov, Alexander Markov, In-Hwan Lee, Haeng-Keun Ahn, Sergey Karpov, Stephen Pearton
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Volume:
207
Year:
2010
Language:
english
Pages:
3
DOI:
10.1002/pssa.200983413
File:
PDF, 195 KB
english, 2010
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