Volume 207; Issue 6

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physica status solidi (a)
Volume 207; Issue 6

physica status solidi (a)

Volume 207; Issue 6

1

Minority carrier injection limited current in Re/4H-SiC Schottky diodes

K. Sarpatwari, S. E. Mohney, S. Ashok, O. O. Awadelkarim

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 245 KB

english, 2010

2

Spectroscopic properties of Yb3+-doped Ca4Gd0.5Y0.5O(BO3)3 single crystals

Yan Zhang, Bo Wei, Guofu Wang

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 457 KB

english, 2010

3

Effects of shallow traps on the reverse current of diamond Schottky diode: An electrical transient study

Yiuri Garino, Tokuyuki Teraji, Satoshi Koizumi, Yasuo Koide, Toshimichi Ito

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 245 KB

english, 2010

4

Superconducting and microstructural properties of Mg1−xAgxB2

Kiran Singh, Rajneesh Mohan, Naresh Kumar, Shovit Bhattacharya, Sudhindra Rayaprol, N. K. Gaur, Ram K. Singh

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 398 KB

english, 2010

5

Structural, optical, and electrical properties of n-ZnO/p-GaAs heterojunction

Süleyman Tekmen, Emre Gür, Hatice Asıl, Kübra Çınar, Cevdet Coşkun, Sebahattin Tüzemen

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 285 KB

english, 2010

6

Phase stability and magnetic properties of the Heusler alloy Mn2CuAl ribbons

Z. Q. Feng, H. Z. Luo, Y. X. Wang, Y. X. Li, W. Zhu, G. H. Wu, F. B. Meng

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 163 KB

english, 2010

7

Room temperature magnetoresistance of La0.7Ca0.2Ba0.1MnO3/Ag thin films

Y. Kuru, H.-U. Habermeier, R. Tripathi, V. P. S. Awana, H. Kishan

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 332 KB

english, 2010

8

Thermal analysis and characterization of the effect of substrate thinning on the peformances of GaN-based light emitting diodes

H. K. Lee, J. S. Yu, Y. T. Lee

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 462 KB

english, 2010

9

Effect of deep-level states on current–voltage characteristics and electroluminescence of blue and UV light-emitting diodes

R. Nana, P. Gnanachchelvi, M. A. Awaah, M. H. Gowda, A. M. Kamto, Y. Wang, M. Park, K. Das

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 416 KB

english, 2010

10

Effect of buffer thickness on DC and microwave performance of AlGaN/GaN heterojunction field-effect transistors

Serguei A. Chevtchenko, Frank Brunner, Joachim Würfl, Günther Tränkle

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 320 KB

english, 2010

11

Waveguide design of green InGaN laser diodes

Teresa Lermer, Marc Schillgalies, Andreas Breidenassel, Désirée Queren, Christoph Eichler, Adrian Avramescu, Jens Müller, Wolfgang Scheibenzuber, Ulrich Schwarz, Stephan Lutgen, Uwe Strauss

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 403 KB

english, 2010

12

Growth and characterization of free-standing zinc-blende GaN layers and substrates

S. V. Novikov, C. T. Foxon, A. J. Kent

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 334 KB

english, 2010

13

Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties

Alexander Polyakov, Anatoliy Govorkov, Nikolay Smirnov, Alexander Markov, In-Hwan Lee, Haeng-Keun Ahn, Sergey Karpov, Stephen Pearton

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 195 KB

english, 2010

14

Facet formation for laser diodes on nonpolar and semipolar GaN

Jens Rass, Tim Wernicke, Raimund Kremzow, Wilfred John, Sven Einfeldt, Patrick Vogt, Markus Weyers, Michael Kneissl

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 335 KB

english, 2010

15

Theoretical investigations of polytypism in AlN thin films

Tomonori Ito, Takumi Ito, Daisuke Ammi, Toru Akiyama, Kohji Nakamura

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 331 KB

english, 2010

16

Growth of InGaN/GaN light emitting diodes by MOCVD with a thin tapered reactor cell

Kenji Iso, Ryohei Takaki, Yoshiyasu Ishihama, Tomokazu Inagawa, Yuzuru Takahashi

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 208 KB

english, 2010

17

MBE growth of cubic AlN on 3C-SiC substrate

Thorsten Schupp, Georg Rossbach, Pascal Schley, Rüdiger Goldhahn, Marcus Röppischer, Norbert Esser, Christoph Cobet, Klaus Lischka, Donat Josef As

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 312 KB

english, 2010

18

InGaN-based 518 and 488 nm laser diodes on c-plane GaN substrate

Takashi Miyoshi, Shingo Masui, Takeshi Okada, Tomoya Yanamoto, Tokuya Kozaki, Shin-ichi Nagahama, Takashi Mukai

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 269 KB

english, 2010

19

High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient

Kengo Nagata, Tomoki Ichikawa, Kenichiro Takeda, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 253 KB

english, 2010

20

Modulation of polarization field by fluorine ions in AlGaN/GaN heterostructures revealed by positron annihilation spectroscopy

Maojun Wang, Chung Choi Cheng, Chris D. Beling, Stevenson Fung, Kevin J. Chen

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 296 KB

english, 2010

21

Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE

Atsushi Nishikawa, Takashi Kawasaki, Naoki Furukawa, Yoshikazu Terai, Yasufumi Fujiwara

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 210 KB

english, 2010

22

Growth of GaN crystals by Na flux LPE method

Y. Mori, Y. Kitaoka, M. Imade, F. Kawamura, N. Miyoshi, M. Yoshimura, T. Sasaki

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 227 KB

english, 2010

23

In-clustering effects in InAlN and InGaN revealed by high pressure studies

I. Gorczyca, T. Suski, A. Kamińska, G. Staszczak, H. P. D. Schenk, N. E. Christensen, A. Svane

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 141 KB

english, 2010

24

Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures

Lutz Kirste, Taek Lim, Rolf Aidam, Stefan Müller, Patrick Waltereit, Oliver Ambacher

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 421 KB

english, 2010

25

Defects in highly Mg-doped AlN

Kentaro Nonaka, Toshiaki Asai, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 372 KB

english, 2010

26

Fabrication of freestanding 2″-GaN wafers by hydride vapour phase epitaxy and self-separation during cooldown

Frank Lipski, Thomas Wunderer, Stephan Schwaiger, Ferdinand Scholz

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 379 KB

english, 2010

27

Impact of n-type doping on the terahertz surface emission from c-plane InN

V. M. Polyakov, V. Cimalla, V. Lebedev, F. Schwierz

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 283 KB

english, 2010

28

Optical gain and gain saturation of blue-green InGaN quantum wells

Dmitry Sizov, Rajaram Bhat, Jerome Napierala, Chad Gallinat, Kechang Song, Donald Allen, Chung-en Zah

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 260 KB

english, 2010

29

Determination of the valence band offsets at HfO2/InN(0001) and InN/In0.3Ga0.7N(0001) heterojunctions using X-ray photoelectron spectroscopy

Anja Eisenhardt, Andreas Knübel, Ralf Schmidt, Marcel Himmerlich, Joachim Wagner, Juergen A. Schaefer, Stefan Krischok

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 335 KB

english, 2010

30

MOVPE growth and optical characterization of InGaAsN T-shaped quantum wires lattice-matched to GaAs

Pawinee Klangtakai, Sakuntam Sanorpim, Ryuji Katayama, Kentaro Onabe

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 243 KB

english, 2010

31

A growth model of cubic GaN microstripes grown by MOVPE: Vapour phase diffusion model including surface migration effects

Pitsiri Sukkaew, Sakuntam Sanorpim, Kentaro Onabe

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 304 KB

english, 2010

32

Impact of gate dielectric thickness on the electrical properties of AlGaN/GaN MISHFETs on Si(111) substrate

Martin Eickelkamp, Dirk Fahle, Johannes Lindner, Michael Heuken, Christian Lautensack, Holger Kalisch, Rolf H. Jansen, Andrei Vescan

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 246 KB

english, 2010

33

Stress test measurements of lattice-matched InAlN/AlN/GaN HFET structures

Jacob H. Leach, Mo Wu, Xianfeng Ni, Xing Li, Ümit Özgür, Hadis Morkoç, Juozas Liberis, Emilis Šermukšnis, Arvydas Matulionis, Hailing Cheng, Çagliyan Kurdak, Yong-Tae Moon

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 184 KB

english, 2010

34

Stress relaxed nanoepitaxy GaN for growth of phosphor-free indium-rich nanostructures incorporated in apple-white LEDs

C. B. Soh, W. Liu, S. J. Chua, N. S. S. Ang, A. M. Yong, S. C. Lai, J. H. Teng

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 355 KB

english, 2010

35

GaN/AlGaN nanostructures for intersubband optoelectronics

M. Tchernycheva, H. Macchadani, L. Nevou, J. Mangeney, F. H. Julien, P. K. Kandaswamy, A. Wirthmüller, E. Monroy, A. Vardi, S. Schacham, G. Bahir

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 328 KB

english, 2010

36

AlN synthesis on AlN/SiC template using Li–Al–N solvent

Yoshihiro Kangawa, Koichi Kakimoto

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 314 KB

english, 2010

37

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

Bin Liu, Ping Han, Zili Xie, Rong Zhang, Chengxiang Liu, Xiangqian Xiu, Xuemei Hua, Hai Lu, Peng Chen, Youdou Zheng, Shengming Zhou

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 261 KB

english, 2010

38

Degradation mechanism of light-emitting diodes on patterned sapphire substrate

Sei-Min Kim, Young-Boo Moon, Il-Kyu Park, Ja-Soon Jang

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 427 KB

english, 2010

39

GaN-based nanowires: From nanometric-scale characterization to light emitting diodes

A.-L. Bavencove, G. Tourbot, E. Pougeoise, J. Garcia, P. Gilet, F. Levy, B. André, G. Feuillet, B. Gayral, B. Daudin, Le Si Dang

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 318 KB

english, 2010

40

Selectivity enhancement by hydrogen addition in selective area metal-organic vapor phase epitaxy of GaN and InGaN

Tomonari Shioda, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 407 KB

english, 2010

41

Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3

V. N. Jmerik, A. M. Mizerov, T. V. Shubina, A. A. Toropov, K. G. Belyaev, A. A. Sitnikova, M. A. Yagovkina, P. S. Kop'ev, E. V. Lutsenko, A. V. Danilchyk, N. V. Rzheutskii, G. P. Yablonskii, B. Monema

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 560 KB

english, 2010

42

True green InGaN laser diodes

Stephan Lutgen, Adrian Avramescu, Teresa Lermer, Desiree Queren, Jens Müller, Georg Bruederl, Uwe Strauss

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 299 KB

english, 2010

43

AlInN HEMT grown on SiC by metalorganic vapor phase epitaxy for millimeter-wave applications

Shiping Guo, Xiang Gao, Daniel Gorka, Jinwoork W. Chung, Han Wang, Tomas Palacios, Antonio Crespo, James K. Gillespie, Kelson Chabak, Manuel Trejo, Virginia Miller, Mark Bellot, Glen Via, Mauricio Kos

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 568 KB

english, 2010

44

The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD

G. Durkaya, M. Buegler, R. Atalay, I. Senevirathna, M. Alevli, O. Hitzemann, M. Kaiser, R. Kirste, A. Hoffmann, N. Dietz

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 396 KB

english, 2010

45

GaInN-based LED structures on selectively grown semi-polar crystal facets

Ferdinand Scholz, Thomas Wunderer, Martin Feneberg, Klaus Thonke, Andrei Chuvilin, Ute Kaiser, Sebastian Metzner, Frank Bertram, Jürgen Christen

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 485 KB

english, 2010

46

Growth and electron microscopy study of GaN/MgAl2O4 heterostructures

Guoqiang Li, Shao-Ju Shih, Li Fu

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 281 KB

english, 2010

47

Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes

Mingwei Zhu, Shi You, Theeradetch Detchprohm, Tanya Paskova, Edward A. Preble, Christian Wetzel

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 345 KB

english, 2010

48

Electroluminescence from isolated single indium gallium nitride quantum dots up to 150 K

J. Kalden, C. Tessarek, K. Sebald, S. Figge, C. Kruse, D. Hommel, J. Gutowski

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 181 KB

english, 2010

49

GaN/AlN quantum disc single-nanowire photodetectors

L. Rigutti, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin, F. H. Julien, R. Songmuang, E. Monroy, S. T. Chou, Y. T. Lin, P. H. Tseng, L. W. Tu, F. Fortuna, L. Zagonel, M. Kociak, O. Stephan

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 412 KB

english, 2010

50

Structural characterization of thick (1122) GaN layers grown by HVPE on m-plane sapphire

Alexander Usikov, Vitali Soukhoveev, Lisa Shapovalov, Alexander Syrkin, Vladimir Ivantsov, Bernard Scanlan, Alexey Nikiforov, Andre Strittmatter, Noble Johnson, Jian-Guo Zheng, Philippe Spiberg, Husse

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 466 KB

english, 2010

51

Optical polarization anisotropy of nonpolar InN epilayers

K. Wang, T. Yamaguchi, A. Takeda, T. Kimura, K. Kawashima, T. Araki, Y. Nanishi

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 534 KB

english, 2010

52

Transparent semiconducting oxides: materials and devices

Marius Grundmann, Heiko Frenzel, Alexander Lajn, Michael Lorenz, Friedrich Schein, Holger von Wenckstern

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 876 KB

english, 2010

53

Contents: (Phys. Status Solidi A 6/2010)

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 271 KB

english, 2010

54

Most accessed Early View articles

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 37 KB

english, 2010

55

Frontispiece

Journal:

physica status solidi (a)

Year:

2010

File:

PDF, 420 KB

2010

56

Information for authors

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 131 KB

english, 2010

57

Polarization dependences of absorption and luminescence spectra on each crystal face of α-quaterthiophene and α-quinquethiophene

Shin Tanaka, Yoshitaka Katano, Yuki Kimura, Takehisa Yoshinari, Shin-ichiro Nagasaka, Hiroki Itoh, Yasunao Kuriyama

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 462 KB

english, 2010

58

Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production

Rolf Aidam, Patrick Waltereit, Lutz Kirste, Michael Dammann, Rüdiger Quay

Journal:

physica status solidi (a)

Year:

2010

Language:

english

File:

PDF, 382 KB

english, 2010

59

Front Cover (Phys. Status Solidi A 6/2010)

Marius Grundmann, Heiko Frenzel, Alexander Lajn, Michael Lorenz, Friedrich Schein, Holger von Wenckstern

Journal:

physica status solidi (a)

Year:

2010

File:

PDF, 158 KB

2010

60

Back Cover (Phys. Status Solidi A 6/2010)

K. Wang, T. Yamaguchi, A. Takeda, T. Kimura, K. Kawashima, T. Araki, Y. Nanishi

Journal:

physica status solidi (a)

Year:

2010

File:

PDF, 222 KB

2010

61

Back Cover (Phys. Status Solidi A 6/2010)

Y. Mori, Y. Kitaoka, M. Imade, F. Kawamura, N. Miyoshi, M. Yoshimura, T. Sasaki

Journal:

physica status solidi (a)

Year:

2010

File:

PDF, 411 KB

2010

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