Growth of InGaN/GaN light emitting diodes by MOCVD with a...

Growth of InGaN/GaN light emitting diodes by MOCVD with a thin tapered reactor cell

Kenji Iso, Ryohei Takaki, Yoshiyasu Ishihama, Tomokazu Inagawa, Yuzuru Takahashi
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Volume:
207
Year:
2010
Language:
english
Pages:
3
DOI:
10.1002/pssa.200983434
File:
PDF, 208 KB
english, 2010
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