Fabrication of freestanding 2″-GaN wafers by hydride vapour phase epitaxy and self-separation during cooldown
Frank Lipski, Thomas Wunderer, Stephan Schwaiger, Ferdinand ScholzVolume:
207
Year:
2010
Language:
english
Pages:
5
DOI:
10.1002/pssa.200983517
File:
PDF, 379 KB
english, 2010