Impact of gate dielectric thickness on the electrical properties of AlGaN/GaN MISHFETs on Si(111) substrate
Martin Eickelkamp, Dirk Fahle, Johannes Lindner, Michael Heuken, Christian Lautensack, Holger Kalisch, Rolf H. Jansen, Andrei VescanVolume:
207
Year:
2010
Language:
english
Pages:
3
DOI:
10.1002/pssa.200983554
File:
PDF, 246 KB
english, 2010