The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD
G. Durkaya, M. Buegler, R. Atalay, I. Senevirathna, M. Alevli, O. Hitzemann, M. Kaiser, R. Kirste, A. Hoffmann, N. DietzVolume:
207
Year:
2010
Language:
english
Pages:
4
DOI:
10.1002/pssa.200983622
File:
PDF, 396 KB
english, 2010