Structural characterization of thick (1122) GaN layers...

physica status solidi (a) 2010 Vol. 207; Iss. 6

Structural characterization of thick (1122) GaN layers grown by HVPE on m-plane sapphire

Alexander Usikov, Vitali Soukhoveev, Lisa Shapovalov, Alexander Syrkin, Vladimir Ivantsov, Bernard Scanlan, Alexey Nikiforov, Andre Strittmatter, Noble Johnson, Jian-Guo Zheng, Philippe Spiberg, Husse
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Volume:
207
Year:
2010
Language:
english
Pages:
4
DOI:
10.1002/pssa.200983655
File:
PDF, 466 KB
english, 2010
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