Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production
Rolf Aidam, Patrick Waltereit, Lutz Kirste, Michael Dammann, Rüdiger QuayVolume:
207
Year:
2010
Language:
english
Pages:
5
DOI:
10.1002/pssa.201026020
File:
PDF, 382 KB
english, 2010