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Raman and transmission electron microscopy characterization of InN samples grown on GaN/Al2O3 by molecular beam epitaxy
J. Arvanitidis, M. Katsikini, S. Ves, A. Delimitis, Th. Kehagias, Ph. Komninou, E. Dimakis, E. Iliopoulos, A. GeorgakilasVolume:
243
Year:
2006
Language:
english
Pages:
6
DOI:
10.1002/pssb.200565193
File:
PDF, 331 KB
english, 2006