Volume 243; Issue 7

physica status solidi (b)

Volume 243; Issue 7
10

Study of InAsN quantum dots on GaAs substrates by molecular beam epitaxy

Year:
2006
Language:
english
File:
PDF, 199 KB
english, 2006
12

Raman study of N bonding in AlGaAs/InGaAsN multiquantum wells

Year:
2006
Language:
english
File:
PDF, 168 KB
english, 2006
19

Low density GaN quantum dots on AlGaN

Year:
2006
Language:
english
File:
PDF, 225 KB
english, 2006
25

New semiconductor alloy GaNAsBi with temperature-insensitive bandgap

Year:
2006
Language:
english
File:
PDF, 536 KB
english, 2006
37

Meta-GGA calculation of the electronic structure of group III–V nitrides

Year:
2006
Language:
english
File:
PDF, 153 KB
english, 2006
40

MOVPE growth of InAsN films on GaAs(001) substrates with an InAs buffer layer

Year:
2006
Language:
english
File:
PDF, 435 KB
english, 2006
45

Growth and optical characterization of InAsN quantum dots

Year:
2006
Language:
english
File:
PDF, 141 KB
english, 2006
51

The dominant shallow 0.225 eV acceptor in GaN

Year:
2006
Language:
english
File:
PDF, 195 KB
english, 2006
53

N-plasma assisted MBE grown GaN films on Si(111)

Year:
2006
Language:
english
File:
PDF, 257 KB
english, 2006
58

Investigating the electrical properties of Si donors in AlxGa1–xN alloys

Year:
2006
Language:
english
File:
PDF, 902 KB
english, 2006
59

Site selectivity of Fe3+Ga and the formation of Fe3+Ga–Gai pairs in GaN

Year:
2006
Language:
english
File:
PDF, 333 KB
english, 2006
60

Relaxation in crack-free AlN/GaN superlattices

Year:
2006
Language:
english
File:
PDF, 212 KB
english, 2006