Unintentionally doped InN grown onto an atomically flat AlN intermediate layer using plasma-assisted molecular beam epitaxy
K. R. Wang, L. W. Tu, S. J. Lin, Y. L. Chen, Z. W. Jiang, M. Chen, C. L. Hsiao, K. H. Cheng, J. W. Yeh, S. K. ChenVolume:
243
Year:
2006
Language:
english
Pages:
7
DOI:
10.1002/pssb.200565449
File:
PDF, 399 KB
english, 2006