Structural evaluation of GaN/sapphire grown by epitaxial...

physica status solidi (b) 2006 Vol. 243; Iss. 7

Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction

M. Drakopoulos, M. Laügt, T. Riemann, B. Beaumont, P. Gibart
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Volume:
243
Year:
2006
Pages:
1
DOI:
10.1002/pssb.200690013
File:
PDF, 440 KB
2006
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