Ru-Induced Deep Levels in Ru/4H-SiC Epilayer Schottky...

ECS Journal of Solid State Science and Technology 2016 Vol. 5; Iss. 4

Ru-Induced Deep Levels in Ru/4H-SiC Epilayer Schottky Diodes by Deep Level Transient Spectroscopy

Nguyen, Khai V., Mandal, Krishna C.
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Volume:
5
Year:
2016
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0131604jss
File:
PDF, 440 KB
english, 2016
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