1.3 µm high indium content (42.5%) GaInNAs/GaAs quantum...

physica status solidi (c) 2006 Vol. 3; Iss. 3

1.3 µm high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

Zhichuan Niu, Shiyong Zhang, Haiqiao Ni, Donghai Wu, Zhenhong He, Zheng Sun, Qin Han, Ronghan Wu
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Volume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200564103
File:
PDF, 325 KB
english, 2006
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