Volume 3; Issue 3

physica status solidi (c)

Volume 3; Issue 3

1

Multi-wafer MBE grown InP-based DHBTs for millimeterwave and digital applications

R. Driad, R. Lösch, K. Schneider, R. E. Makon, M. Ludwig, G. Weimann

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 357 KB

english, 2006

2

1.3 µm high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

Zhichuan Niu, Shiyong Zhang, Haiqiao Ni, Donghai Wu, Zhenhong He, Zheng Sun, Qin Han, Ronghan Wu

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 325 KB

english, 2006

3

Dual-gate AlGaN/GaN high-electron-mobility transistors with short gate length for high-power mixers

K. Shiojima, T. Makimura, T. Maruyama, T. Kosugi, T. Suemitsu, N. Shigekawa, M. Hiroki, H. Yokoyama

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 189 KB

english, 2006

4

Molecular-dynamics study of SiGe epitaxy on a Si substrate

K. Shintani, Y. Yano, M. Abe

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 347 KB

english, 2006

5

InP/GaAsSb/InP DHBTs with fT = 300 GHz and high maximum oscillation frequencies: the effect of scaling on device performance

H. G. Liu, D.W. DiSanto, S. P. Watkins, C. R. Bolognesi

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 331 KB

english, 2006

6

Giant magnetopiezoresistance at the localized-extended electronic state transition in a high-mobility 2DEG system

H. Yamaguchi, S. Miyashita, Y. Hirayama

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 151 KB

english, 2006

7

At bias extraction of parasitic source and drain resistances in AlGaN/GaN HFETs: bias dependence and implications for device modelling and physics

D. W. DiSanto, C. R. Bolognesi

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 219 KB

english, 2006

8

Quantitative compositional analysis of quantum well intermixing using a low temperature MBE-grown InP cap layer

O. Hulko, D.A. Thompson, J. G. Simmons

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 230 KB

english, 2006

9

Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication

K. Yamashita, M. Yoshimoto, K. Oe

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 203 KB

english, 2006

10

InAs quantum dot formed on GaNAs buffer layer by Metalorganic Chemical Vapor Deposition

R. Suzuki, T. Miyamoto, T. Matsuura, F. Koyama

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 252 KB

english, 2006

11

Low threshold GaInAs quantum well lasers grown under low growth rate by solid-source MBE for 1200 nm wavelength range

M. Ohta, T. Miyamoto, T. Matsuura, Y. Matsui, T. Furuhata, T. Iwasaki, Y. Kashihara, F. Koyama

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 268 KB

english, 2006

12

Precise control of growth of DBR by MBE using in-situ reflectance monitoring system

M. Mizutani, F. Teramae, O. Kobayashi, S. Naritsuka, T. Maruyama

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 248 KB

english, 2006

13

Optical Kerr gate switching of AlGaAs/AlAs multilayer structures without pattern effects by the two-photon resonant nonlinear response

T. Isu, K. Akiyama, N. Tomita, T. Nishimura, Y. Nomura, K. Kanamoto

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 195 KB

english, 2006

14

Spectrally resolved nonlinear optical response of weakly confined excitons under femtosecond laser pulse excitation in GaAs thin films

O. Kojima, T. Isu, J. Ishi-Hayase, M. Tsuchiya

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 96 KB

english, 2006

15

Carrier lifetime in compressively strained InGaAs quantum well lasers with InGaAsP barrier/waveguide layers grown on GaAs

Wataru Susaki, Soichro Ukawa, Masashi Tanaka

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 303 KB

english, 2006

16

Interplay of external and internal field effects on radiative recombination efficiency in InGaN quantum well diodes

H. Aizawa, K. Soejima, A. Hori, A. Satake, K. Fujiwara

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 558 KB

english, 2006

17

Correlation of band formation and local vibrational mode structure in Ga0.95Al0.05As1–xNx with 0 ≤ x ≤ 0.03

M. Güngerich, P. J. Klar, W. Heimbrodt, K. Volz, K. Köhler, J. Wagner, A. Polimeni, M. Capizzi, H. Ch. Alt, Y. V. Gomeniuk

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 212 KB

english, 2006

18

Characterisation of the electrical properties of solution-grown GaN crystals by reflectivity and Hall measurements

B. Birkmann, C. Salcianu, E. Meissner, S. Hussy, J. Friedrich, G. Müller

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 476 KB

english, 2006

19

Laser diodes with highly strained InGaAs MQWs and very narrow vertical far fields

F. Bugge, U. Zeimer, H. Wenzel, R. Staske, B. Sumpf, G. Erbert, M. Weyers, G. Tränkle

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 330 KB

english, 2006

20

Study of the activation process of Mg dopant in GaN:Mg layers

B. Paszkiewicz, R. Paszkiewicz, A. Szyszka, M. Wosko, W. Macherzynski, M. Tlaczala, R. Kudrawiec, M. Syperek, J. Misiewicz, E. Dumiszewska, W. Strupinski

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 254 KB

english, 2006

21

Deep levels in high resistivity GaN epilayers grown by MOCVD

Cebao Fang, Xiaoliang Wang, Junxi Wang, Chao Liu, Cuimei Wang, Guoxin Hu, Jianping Li, Chengji Li

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 270 KB

english, 2006

22

Effect of well width and modulation-doping distributions on spectral characteristics for asymmetric multiple quantum wells

C. Y. Chen, G. J. Din, David J. Feng, E. Y. Lin, T.S. Lay, T. Y. Chang

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 213 KB

english, 2006

23

First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP-material system

B. Kunert, S. Reinhard, J. Koch, M. Lampalzer, K. Volz, W. Stolz

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 156 KB

english, 2006

24

Thermally activated electron conductivity in Ga(As,N) with N-induced potential fluctuations

F. Ishikawa, K.-J. Friedland, H. Kostial, K. H. Ploog

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 161 KB

english, 2006

25

The influence of collector dopant profile on breakdown voltage and cutoff frequency of Si-based RF bipolar transistors

Christian Schippel, Jun Fu, Frank Schwierz

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 161 KB

english, 2006

26

Empirical model including band-to-band Coulomb interaction for refractive indices of GaAs and InP-based materials at photon energies near and above the band-gap

E. Y. Lin, T. S. Lay, T. Y. Chang

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 478 KB

english, 2006

27

The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure

Ran Junxue, Wang Xiaoliang, Hu Guoxin, Li Jianping, Wang Junxi, Wang Cuimei, Zeng Yiping, Li Jinmin

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 203 KB

english, 2006

28

Influence of Al content on electrical and structural properties of Si-doped AlxGa1–xN/GaN HEMT structures

Cuimei Wang, Xiaoliang Wang, Guoxin Hu, Junxi Wang, Jianping Li

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 336 KB

english, 2006

29

Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AlN/GaN heterostructures grown on sapphire substrates by MOCVD

Xiaoliang Wang, Cuimei Wang, Guoxin Hu, Junxi Wang, Jianping Li

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 266 KB

english, 2006

30

Carrier diffusion lengths in (In,Ga)(As,N)/GaAs quantum wells studied by spatially resolved cathodoluminescence

U. Jahn, J. Miguel-Sánchez, T. Flissikowski, H. T. Grahn, R. Hey, A. Guzmán

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 323 KB

english, 2006

31

InAsSb/InGaAs quantum nanostructures on InP (100) substrate: observation of 2.35 µm photoluminescence

F. Doré, C. Cornet, A. Schliwa, A. Ballestar, J. Even, N. Bertru, O. Dehaese, I. Alghoraibi, H. Folliot, R. Piron, A. Le Corre, S. Loualiche

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 194 KB

english, 2006

32

Sampled grating tunable twin-guide laser diodes with wide tuning range (≥40 nm) and large output power (≥10 mW)

R. Todt, T. Jacke, R. Meyer, J. Adler, R. Laroy, G. Morthier, M.-C. Amann

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 529 KB

english, 2006

33

Deep levels in GaAs ultrashallow sidewall pin junctions measured by photocapacitance method

Takeo Ohno, Yutaka Oyama, Jun-ichi Nishizawa

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 205 KB

english, 2006

34

Tunneling in quantum confined GaAs ultrashallow sidewall tunnel junctions

Takeo Ohno, Yutaka Oyama, Jun-ichi Nishizawa

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 2.76 MB

english, 2006

35

Homoepitaxial SiC deposition by MBE with Si and monomethlysilane

M. Komatz, K. Matsuishi, S. K. Hong, T. Yao

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 592 KB

english, 2006

36

Imaging of electron standing waves in InAs/GaSb superlattices by low-temperature scanning tunneling spectroscopy

K. Suzuki, K. Kanisawa, S. Perraud, M. Ueki, K. Takashina, Y. Hirayama

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 404 KB

english, 2006

37

Research on the band-gap of InN grown on silicon substrates

Hongling Xiao, Xiaoliang Wang, Junxi Wang, Nanhong Zhang, Hongxin Liu, Yiping Zeng, Jinmin Li

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 164 KB

english, 2006

38

Coulomb repulsive correlation in A3B5 semiconductor quantum dots in the presence of a magnetic field

A. A. Avetisyan, A. P. Djotyan, K. Moulopoulos

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 585 KB

english, 2006

39

(In,Ga)As/GaAs quantum wells on GaAs(110)

R. Hey, A. Trampert, P. Santos

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 320 KB

english, 2006

40

Characterization of highly stacked InAs quantum dot layers on InP substrate for a planar saturable absorber at 1.5 µm band

Jun Inoue, Toshiro Isu, Kouichi Akahane1, Naokatsu Yamamoto1, Masahiro Tsuchiya

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 210 KB

english, 2006

41

Quantum dot based photonic devices at 1.3 µm: Direct modulation, mode-locking, SOAs and VCSELs

M. Laemmlin, G. Fiol, M. Kuntz, F. Hopfer, A. Mutig, N.N. Ledentsov, A.R. Kovsh, C. Schubert, A. Jacob, A. Umbach, D. Bimberg

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 267 KB

english, 2006

42

Carrier storage and confinement in GaAs-based self-organized quantum dots

Martin Geller, Andreas Marent, Erik Stock, Alexey P. Vasi'ev, Elisaveta S. Semenova, Alexey E. Zhukov, Victor M. Ustinov, Dieter Bimberg

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 456 KB

english, 2006

43

Temperature dependence of the anomalous Hall effect in ferromagnetic (Ga,Mn)As epilayers

Y. S. Kim, H. K. Choi, Z. G. Khim, J. C. Woo, Y. D. Park, S. H. Chun

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 383 KB

english, 2006

44

Valence-band mixing induced by sp-d exchange interaction in CdMnTe quantum wires

Y. Harada, T. Kita, O. Wada, L. Marsal, H. Mariette, H. Ando

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 193 KB

english, 2006

45

Monte Carlo study of steady-state and transient transport in wurtzite InN

V. M. Polyakov, F. Schwierz, D. Fritsch, H. Schmidt

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 294 KB

english, 2006

46

Characterisation of AlGaN MSM by Light Beam Induced Current technique

Bogdan Paszkiewicz, Adam Szyszka, Mateusz Wosko, Wojciech Macherzynski, Regina Paszkiewicz, Marek Tlaczala

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 651 KB

english, 2006

47

Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering

R. Müller, U. Künecke, A. Thuaire, M. Mermoux, M. Pons, P. Wellmann

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 148 KB

english, 2006

48

1.3 µm single-mode extended cavity GaInNAs lasers produced using a sputtered SiO2 quantum well intermixing technique

J. L. Harris, A. C. Bryce, O. P. Kowalski, J. H. Marsh

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 136 KB

english, 2006

49

Anomalous charge carrier transport phenomena in highly aluminum doped SiC

R. Müller, U. Künecke, R. Weingärtner, M. Maier, P. Wellmann

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 196 KB

english, 2006

50

Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µm

E. Homeyer, R. Piron, P. Caroff, C. Paranthoen, O. Dehaese, A. Le Corre, S. Loualiche

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 295 KB

english, 2006

51

Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals

S. A. Sakwe, R. Müller, P. Masri, P. J. Wellmann

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 265 KB

english, 2006

52

Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiC

S. A. Sakwe, R. Müller, D. Queren, U. Künecke, P. J. Wellmann

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 208 KB

english, 2006

53

Microchip-sized InSb photodiode infrared sensors operating at room temperature

Naohiro Kuze, Edson G. Camargo, Koichiro Ueno, Yoshifumi Kawakami, Yoshitaka Moriyasu, Kazuhiro Nagase, Masayuki Sato, Hidetoshi Endo, Kazutoshi Ishibashi, Masaru Ozaki

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 447 KB

english, 2006

54

Growth, structural and optical studies of CdSe/ZnSe nanostructures grown by MBE on GaAs and Si substrates

Murvetali M. Rzaev, Igor P. Kazakov, Vladimir I. Kozlovski, Yan K. Skasyrsky, Evgeny E. Onishchenko, Friedrich Schäffler, Gunter Hesser, Elkhan M. Pashaev, Ilia A. Soubbotin

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 367 KB

english, 2006

55

Gallium nitride powerbar transistors with via holes fabricated by laser ablation

Richard Lossy, Armin Liero, Olaf Krüger, Joachim Würfl, Günther Tränkle

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 253 KB

english, 2006

56

Spectral and threshold performance of patterned quantum dot lasers

V. C. Elarde, J. J. Coleman

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 623 KB

english, 2006

57

Photoluminescence characterization of (Ga)InAs quantum dots with GaInAsSb cover layer grown by MBE

T. Matsuura, T. Miyamoto, M. Ohta, F. Koyama

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 236 KB

english, 2006

58

Gallium arsenide second-window quantum dot VCSEL

E. Pougeoise, Ph. Gilet, N. Dunoyer, Ph. Grosse, S. Poncet, L. Grenouillet, Ph. Duvaut, A. Chelnokov, J.-M. Gérard, R. Hamelin, C. Rossat

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 347 KB

english, 2006

59

Influence of injector doping density and electron confinement on the properties of GaAs/Al0.45Ga0.55As quantum cascade lasers

S. Höfling, D. Indjin, V. D. Jovanović, A. Mirčetić, J. P. Reithmaier, A. Forchel, Z. Ikonić, N. Vukmirović, P. Harrison, V. Milanović

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 230 KB

english, 2006

60

Modelling chirp as a function of reflectivity in electroabsorption modulated lasers (EML)

S. P. Higgins, A. J. Vickers

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 171 KB

english, 2006

61

Two-color focal plane arrays based on self assembled quantum dots in a well heterostructure

Sanjay Krishna, Darren Forman, Senthil Annamalai, Philip Dowd, Petros Varangis, Tom Tumolillo, Allen Gray, John Zilko, Kathy Sun, Mingguo Liu, Joe Campbell, Daniel Carothers

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 317 KB

english, 2006

62

Photoluminescence of nitrogen-doped ZnO

C. J. Pan, B. J. Pong, B. W. Chou, G. C. Chi, C. W. Tu

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 125 KB

english, 2006

63

Excitons in the stacks of ZnSe/CdSe quantum dots

T. Tchelidze, E. Chikoidze, G. Shmavonyan, T. Kereselidze

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 298 KB

english, 2006

64

Advanced millimeter-wave ICs using metamorphic HEMT technology

M. Schlechtweg, A. Tessmann, A. Leuther, C. Schwörer, H. Massler, M. Mikulla, M. Walther, R. Lösch

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 234 KB

english, 2006

65

GaN/AlGaN HEMT hybrid and MMIC microstrip power amplifiers on s.i. SiC substrate

R. Quay, R. Kiefer, F. van Raay, R. Reiner, O. Kappeler, S. Müller, M. Dammann, W. Bronner, M. Mikulla, M. Schlechtweg, D. Wiegner, U. Seyfried, W. Templ, G. Weimann

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 247 KB

english, 2006

66

Off-state and on-state breakdown of GaAs MESFET, PHEMT and Power PHEMT

Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean-Luc Muraro

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 124 KB

english, 2006

67

InP double-hetero bipolar transistor technology for 130 GHz clock speed

Nils G. Weimann, V. Houtsma, Y. Yang, J. Frackoviak, A. Tate, J. Chen, J. Weiner, J. Lee, Y. Baeyens, Y. K. Chen

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 280 KB

english, 2006

68

SiGe HBT BiCMOS technology for millimeter-wave applications

Alvin Joseph, Mattias Dahlstrom, Qizhi Liu, Bradley Orner, Xuefeng Liu, David Sheridan, Robert Rassel, Jim Dunn, David Ahlgren

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 214 KB

english, 2006

69

Anisotropy of the quantum-confined Stark effect in a single InAs quantum dot

M. Ohmori, K. Torii, H. Sakaki

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 178 KB

english, 2006

70

High-efficiency solar cells from III-V compound semiconductors

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 355 KB

english, 2006

71

Above room-temperature GaInAs/Al(Ga)AsSb quantum cascade lasers

Quankui Yang, Christian Manz, Wolfgang Bronner, Klaus Köhler, Joachim Wagner

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 303 KB

english, 2006

72

InAs/GaSb type-II superlattices for single- and dual-color focal plane arrays for the mid-infrared spectral range

Robert Rehm, Johannes Schmitz, Joachim Fleißner, Martin Walther, Johann Ziegler, Wolfgang Cabanski, Rainer Breiter

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 443 KB

english, 2006

73

Negative luminescence of InAs/GaSb superlattice photodiodes

F. Fuchs, D. Hoffmann, A. Gin, A. Hood, Y. Wei, M. Razeghi

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 196 KB

english, 2006

74

Novel GaN and SiC based gas sensors

V. Tilak, K. Matocha, P. Sandvik

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 234 KB

english, 2006

75

High power continuous wave operation of a GaSb-based VECSEL emitting near 2.3 µm

N. Schulz, M. Rattunde, C. Manz, K. Köhler, C. Wild, J. Wagner, S.-S. Beyertt, U. Brauch, T. Kübler, A. Giesen

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 203 KB

english, 2006

76

Hybridization of GaAs, AlAs and (Al, Ga)As with carbon nanotubes by molecular beam epitaxy

I. T. Jeong, M. B. Lee, J. Im, S. Hong, J. Park, M. J. Seong, S. J. Rhee, D. H. Woo, J. C. Woo

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 260 KB

english, 2006

77

In-situ monitoring of MOVPE growth with reflectance anisotropy spectroscopy in an industrial used multi wafer reactor

C. Krahmer, M. Philippens, M. Schubert, K. Streubel

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 232 KB

english, 2006

78

High-power vertical external-cavity surface-emitting lasers

J.-M. Hopkins, S. Calvez, A. J. Kemp, J. E. Hastie, S. A. Smith, A. J. Maclean, D. Burns, M. D. Dawson

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 224 KB

english, 2006

79

High-power vertical external-cavity surface-emitting lasers

J.-M. Hopkins, S. Calvez, A. J. Kemp, J. E. Hastie, S. A. Smith, A. J. Maclean, D. Burns, M. D. Dawson

Journal:

physica status solidi (c)

Year:

2006

File:

PDF, 324 KB

2006

80

7th International Conference on Excitonic Processes in Condensed Matter (EXCON 2006), 26–30 June 2006, Wake Forest University, Winston-Salem, NC, USA

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 107 KB

english, 2006

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