Dual-gate AlGaN/GaN high-electron-mobility transistors with...

physica status solidi (c) 2006 Vol. 3; Iss. 3

Dual-gate AlGaN/GaN high-electron-mobility transistors with short gate length for high-power mixers

K. Shiojima, T. Makimura, T. Maruyama, T. Kosugi, T. Suemitsu, N. Shigekawa, M. Hiroki, H. Yokoyama
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Volume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200564104
File:
PDF, 189 KB
english, 2006
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