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InAs quantum dot formed on GaNAs buffer layer by Metalorganic Chemical Vapor Deposition
R. Suzuki, T. Miyamoto, T. Matsuura, F. KoyamaVolume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200564111
File:
PDF, 252 KB
english, 2006