Influence of Al content on electrical and structural...

physica status solidi (c) 2006 Vol. 3; Iss. 3

Influence of Al content on electrical and structural properties of Si-doped AlxGa1–xN/GaN HEMT structures

Cuimei Wang, Xiaoliang Wang, Guoxin Hu, Junxi Wang, Jianping Li
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Volume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200564129
File:
PDF, 336 KB
english, 2006
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