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Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AlN/GaN heterostructures grown on sapphire substrates by MOCVD
Xiaoliang Wang, Cuimei Wang, Guoxin Hu, Junxi Wang, Jianping LiVolume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200564130
File:
PDF, 266 KB
english, 2006