Dislocation evolution and distribution during physical...

Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals

S. A. Sakwe, R. Müller, P. Masri, P. J. Wellmann
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Volume:
3
Year:
2006
Language:
english
Pages:
5
DOI:
10.1002/pssc.200564152
File:
PDF, 265 KB
english, 2006
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