Gallium nitride powerbar transistors with via holes...

Gallium nitride powerbar transistors with via holes fabricated by laser ablation

Richard Lossy, Armin Liero, Olaf Krüger, Joachim Würfl, Günther Tränkle
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Volume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200564156
File:
PDF, 253 KB
english, 2006
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