Gallium nitride powerbar transistors with via holes fabricated by laser ablation
Richard Lossy, Armin Liero, Olaf Krüger, Joachim Würfl, Günther TränkleVolume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200564156
File:
PDF, 253 KB
english, 2006