InP double-hetero bipolar transistor technology for 130 GHz...

physica status solidi (c) 2006 Vol. 3; Iss. 3

InP double-hetero bipolar transistor technology for 130 GHz clock speed

Nils G. Weimann, V. Houtsma, Y. Yang, J. Frackoviak, A. Tate, J. Chen, J. Weiner, J. Lee, Y. Baeyens, Y. K. Chen
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Volume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200564169
File:
PDF, 280 KB
english, 2006
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