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Determination of carrier diffusion length in MOCVD-grown GaN epilayers on sapphire by optical techniques
E. V. Lutsenko, A. L. Gurskii, V. N. Pavlovskii, G. P. Yablonskii, T. Malinauskas, K. Jarašiūnas, B. Schineller, M. HeukenVolume:
3
Year:
2006
Language:
english
Pages:
5
DOI:
10.1002/pssc.200565118
File:
PDF, 287 KB
english, 2006