Volume 3; Issue 6

physica status solidi (c)

Volume 3; Issue 6

1

InN: Fermi level stabilization by low-energy ion bombardment

L. F. J. Piper, T. D. Veal, C. F. McConville, H. Lu, W. J. Schaff

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 226 KB

english, 2006

2

Thermodynamic stability of In1–x –yGax Aly N on GaN and InN

Yoshihiro Kangawa, Koichi Kakimoto, Tomonori Ito, Akinori Koukitu

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 234 KB

english, 2006

3

Investigation of thermal conductivity of nitride mixed crystals and superlattices by molecular dynamics

Takahiro Kawamura, Yoshihiro Kangawa, Koichi Kakimoto

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 152 KB

english, 2006

4

Analysis of buffer-trapping effects on current collapse of GaN FETs

K. Horio, H. Takayanagi, H. Nakano

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 122 KB

english, 2006

5

Electronic states in nitride semiconductor quantum dots: A tight-binding approach

S. Schulz, G. Czycholl

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 171 KB

english, 2006

6

Eu3+ location in Eu doped GaN thin films and quantum dots

Thomas Andreev, Nguyen Quang Liem, Yuji Hori, Mitsuhiro Tanaka, Osamu Oda, Daniel Le Si Dang, Bruno Daudin

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 284 KB

english, 2006

7

Si diffusion in epitaxial GaN

Rafal Jakiela, Adam Barcz, Ewa Dumiszewska, Andrzej Jagoda

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 208 KB

english, 2006

8

Two-dimensional electron gas in cubic Alx Ga1–xN/GaN heterostructures

S. Potthast, J. Schörmann, J. Fernandez, D. J. As, K. Lischka, H. Nagasawa, M. Abe

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 226 KB

english, 2006

9

Structural and electrical characteristics of Ag/Al0.2Ga0.8N and Ag/Al0.3Ga0.7N Schottky contacts: an XPS study

B. Boudjelida, I. Gee, J. Evans-Freeman, S. A. Clark, M. Azize, J.-M. Bethoux, P. DeMierry

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 160 KB

english, 2006

10

Determination of carrier diffusion length in MOCVD-grown GaN epilayers on sapphire by optical techniques

E. V. Lutsenko, A. L. Gurskii, V. N. Pavlovskii, G. P. Yablonskii, T. Malinauskas, K. Jarašiūnas, B. Schineller, M. Heuken

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 287 KB

english, 2006

11

Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

Shuo Jia, Yong Cai, Deliang Wang, Baoshun Zhang, Kei May Lau, Kevin J. Chen

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 299 KB

english, 2006

12

Specific heat calculations of III-N bulk materials

A. AlShaikhi, G. P. Srivastava

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 110 KB

english, 2006

13

Effect of carrier gas on GaN epilayer characteristics

Y. S. Cho, H. Hardtdegen, N. Kaluza, N. Thillosen, R. Steins, Z. Sofer, H. Lüth

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 327 KB

english, 2006

14

Large bandgap bowing of InxGa1–xN films and growth of blue/green InxGa1–xN/GaN MQWs on highly tensile strained GaN/Si(111) hetero structures

Kang Jea Lee, Tae Su Oh, Tae Ki Kim, Gye Mo Yang, Kee Young Lim

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 994 KB

english, 2006

15

Piezoelectric properties of thin AlN layers for MEMS application determined by piezoresponse force microscopy

K. Tonisch, V. Cimalla, Ch. Foerster, D. Dontsov, O. Ambacher

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 232 KB

english, 2006

16

Microscopic theory of carrier-carrier scattering in nitride based quantum-dot systems

T. R. Nielsen, J. Seebeck, M. Lorke, P. Gartner, F. Jahnke

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 125 KB

english, 2006

17

Crystallization of free standing bulk GaN by HVPE

B. Łucznik, B. Pastuszka, I. Grzegory, M. Boćkowski, G. Kamler, J. Domagała, G. Nowak, P. Prystawko, S. Krukowski, S. Porowski

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 460 KB

english, 2006

18

An AlGaN/GaN two-color photodetector based on an AlGaN/GaN/SiC HEMT layer structure

M. Marso, A. Fox, G. Heidelberger, J. Bernát, H. Lüth

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 196 KB

english, 2006

19

Growth of GaN on patterned thick HVPE free standing GaN substrates by high pressure solution method

M. Boćkowski, I. Grzegory, G. Nowak, B. Łucznik, B. Pastuszka, G. Kamler, M. Wróblewski, P. Kwiatkowski, K. Jasik, W. Wawer, S. Krukowski, S. Porowski

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 490 KB

english, 2006

20

Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs

K. Shiojima, T. Makimura, T. Maruyama, T. Suemitsu, N. Shigekawa, M. Hiroki, H. Yokoyama

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 265 KB

english, 2006

21

Electrical characteristics and thermal stability of Ti contact to p-GaN

C. K. Tan, A. Abdul Aziz, Z. Hassan, F. K. Yam, A. Y. Hudeish

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 230 KB

english, 2006

22

Ion implantation doping for AlGaN/GaN HEMTs

Muneyoshi Suita, Takuma Nanjo, Toshiyuki Oishi, Yuji Abe, Yasunori Tokuda

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 164 KB

english, 2006

23

Low-frequency noise in AlGaN/GaN HEMT structures with AlN thin film layer

S. A. Vitusevich, O. A. Antoniuk, M. V. Petrychuk, S. V. Danylyuk, A. M. Kurakin, A. E. Belyaev, N. Klein

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 253 KB

english, 2006

24

Growth of ternary and quaternary cubic III-nitrides on 3C-SiC substrates

J. Schörmann, S. Potthast, M. Schnietz, S. F. Li, D. J. As, K. Lischka

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 252 KB

english, 2006

25

In-plane anisotropy in uniaxially-strained GaN films detected by optical diffraction technique

Satoru Adachi, Yasunori Toda, Tetsuro Ishiguro, Katsuyuki Hoshino, Yasuhiko Arakawa

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 363 KB

english, 2006

26

Hexagonally-closed-packed micro-light-emitting diodes

H. W. Choi, S. J. Chua

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 115 KB

english, 2006

27

Extremely smooth surface morphology of GaN-based layers on misoriented GaN substrates for high-power blue-violet lasers

Koichi Tachibana, Hajime Nago, Shin-ya Nunoue

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 208 KB

english, 2006

28

Surface enhanced Raman scattering by GaN nanocolumns

A. G. Milekhin, R. Meijers, T. Richter, R. Calarco, H. Lüth, B. A. Paez Sierra, D. R. T. Zahn

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 311 KB

english, 2006

29

High temperature characteristics of doped channel AlGaN/GaN MIS-HFETs with thin AlGaN barrier layer

C. X. Wang, N. Maeda, M. Hiroki, Y. Yokoyama, T. Makimoto, T. Kobayashi, T. Enoki

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 196 KB

english, 2006

30

Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy

April S. Brown, Tong-Ho Kim, Soojeong Choi, Pae Wu, Michael Morse, Maria Losurdo, Maria M. Giangregorio, Giovanni Bruno, Akihiro Moto

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 503 KB

english, 2006

31

Polishing and characterization of thick AlN layers grown on SiC substrates by stress control hydride vapor phase epitaxy

H. Mank, B. Amstatt, D. Turover, E. Bellet-Amalric, B. Daudin, V. Ivantsov, V. Dmitriev, V. Maslennikov

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 214 KB

english, 2006

32

AlGaN/GaN high-electron-mobility transistors on sapphire with Fe-doped GaN buffer layer by MOVPE

T. Aggerstam, M. Sjödin, S. Lourdudoss

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 191 KB

english, 2006

33

AlGaN metal-semiconductor-metal structure for pressure sensing applications

Z. Hassan, Y. C. Lee, S. S. Ng, F. K. Yam, Y. Liu, Z. Rang, M. Z. Kauser, P. P. Ruden, M. I. Nathan

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 349 KB

english, 2006

34

Capacitance characterization of AlN/GaN double-barrier resonant tunnelling diodes

A. M. Kurakin, S. A. Vitusevich, S. V. Danylyuk, A. V. Naumov, C. T. Foxon, S. V. Novikov, N. Klein, H. Lüth, A. E. Belyaev

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 510 KB

english, 2006

35

TEM analysis of annihilation process of threading dislocations in GaN thin films grown by MOVPE with anti-surfactant treatment

M. Hijikuro, N. Kuwano, M. Takeuchi, Y. Aoyagi

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 278 KB

english, 2006

36

Polarity and microstructure in InN thin layers grown by MOVPE

N. Kuwano, Y. Nakahara, H. Amano

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 380 KB

english, 2006

37

InGaN quantum well epilayers morphological evolution under a wide range of MOCVD growth parameter sets

D. I. Florescu, S. M. Ting, V. N. Merai, A. Parekh, D. S. Lee, E.A. Armour, W. E. Quinn

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 521 KB

english, 2006

38

HVPE growth of high quality GaN layers

Peter Brückner, Frank Habel, Ferdinand Scholz

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 172 KB

english, 2006

39

Micro-EL studying of high power blue LEDs

G. A. Onushkin, A. L. Zakgeim, D. A. Zakgeim, I. V. Rozhansky, A. F. Tsatsulnikov, W. V. Lundin, D. S. Sizov

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 303 KB

english, 2006

40

Degradation of blue LEDs related to structural disorder

A. V. Kamanin, A. G. Kolmakov, P. S. Kop'ev, G. A. Onushkin, A. V. Sakharov, N. M. Shmidt, D. S. Sizov, A. A. Sitnikova, A. L. Zakgeim, R. V. Zolotareva, A. S. Usikov

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 442 KB

english, 2006

41

Three methods for the growth of InGaN nanostructures by MOVPE

R. A. Oliver, M. J. Kappers, N. K. van der Laak, C. J. Humphreys

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 554 KB

english, 2006

42

Towards a better understanding of nano-islands formed during atmospheric pressure MOVPE

N. K. van der Laak, R. A. Oliver, J. S. Barnard, P. D. Cherns, M. J. Kappers, C. J. Humphreys

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 2.24 MB

english, 2006

43

Modifying optical properties of InGaN quantum wells by a large piezoelectric polarization

H. Gotoh, T. Tawara, Y. Kobayashi, N. Kobayashi, Y. Yamauchi, T. Makimoto, T. Saitoh

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 252 KB

english, 2006

44

AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch

J. Liu, Y. G. Zhou, J. Zhu, K. M. Lau, K. J. Chen

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 331 KB

english, 2006

45

Variation of thermal resistance with input power in LEDs

Lianqiao Yang, Jianzheng Hu, Lan Kim, Moo Whan Shin

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 386 KB

english, 2006

46

Thermal analysis of GaN-based laser diode package

W. J. Hwang, T. H. Lee, O. H. Nam, H. K. Kim, J. S. Kwak, Y. J. Park, M. W. Shin

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 311 KB

english, 2006

47

Hydrogen generation from aqueous water using n-GaN by photoassisted electrolysis

Katsushi Fujii, Kazuhiro Ohkawa

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 160 KB

english, 2006

48

Tb-doped GaN quantum dots grown by plasma-assisted molecular beam epitaxy

Yuji Hori, Thomas Andreev, Denis Jalabert, Mitsuhiro Tanaka, Osamu Oda, Daniel Le Si Dang, Bruno Daudin

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 263 KB

english, 2006

49

NH3/TMI molar ratio dependence of electrical and optical properties for atmospheric-pressure MOVPE InN

A. Yamamoto, H. Miwa, Y. Shibata, A. Hashimoto

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 156 KB

english, 2006

50

High quality tin zinc oxide/Ag ohmic contacts for UV flip-chip light-emitting diodes

Hyun-Gi Hong, K.-Y. Ban, June-O Song, J. Cho, Y. Park, J. S. Kwak, Ian T. Ferguson, Tae-Yeon Seong

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 127 KB

english, 2006

51

A comparative study on MOVPE InN grown on Ga- and N-polarity bulk GaN

W. J. Wang, H. Miwa, A. Hashimoto, A. Yamamoto

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 476 KB

english, 2006

52

Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers

C. H. Kuo, S. J. Chang, G. C. Chi, K. T. Lam, Y. S. Sun

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 184 KB

english, 2006

53

Doping efficiency and segregation of Si in AlN grown by molecular beam epitaxy

V. Lebedev, F. M. Morales, H. Romanus, G. Ecke, V. Cimalla, M. Himmerlich, S. Krischok, J. A. Schaefer, O. Ambacher

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 177 KB

english, 2006

54

Investigation of optimized ohmic contact of direct ITO layer with synchrotron radiation analysis

Jun-Seok Ha, Jun-Ho Jang, Min-Ho Joo, Tae-Hyeong Kim, Kyu-Ho Park, Hyun-Joon Shin, Jeong-Soo Lee, Jong-Jae Jung

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 228 KB

english, 2006

55

Effects of GaN-buffer etching in atmospheric-pressure MOVPE growth of InN on sapphire

A. Yamamoto, Y. Nagai, H. Miwa, A. Hashimoto

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 139 KB

english, 2006

56

Deterioration of MOVPE InN films on sapphire during growth and post-growth annealing

Hiroshi Miwa, Akihiro Hashimoto, Akio Yamamoto

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 216 KB

english, 2006

57

Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor

E. V. Yakovlev, R. A. Talalaev, R. W. Martin, C. Jeynes, N. Peng, C. J. Deatcher, I. M. Watson

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 176 KB

english, 2006

58

Evaluation of strain in AlN thin films grown on sapphire and 6H-SiC by metalorganic chemical vapor deposition

Naoto Kato, Takashi Inushima

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 277 KB

english, 2006

59

Investigation of AlN nucleation layers for AlGaN/GaN heterostructures on 4H-SiC

S. Boeykens, M. R. Leys, M. Germain, K. Cheng, J. Derluyn, B. Van Daele, G. Van Tendeloo, R. Belmans, G. Borghs

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 169 KB

english, 2006

60

Investigations on local Ga and In incorporation of GaInN quantum wells on facets of selectively grown GaN stripes

B. Neubert, F. Habel, P. Brückner, F. Scholz, M. Schirra, M. Feneberg, K. Thonke, T. Riemann, J. Christen, M. Beer, J. Zweck, G. Moutchnik, M. Jetter

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 239 KB

english, 2006

61

Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy

J. G. Lozano, D. González, A. M. Sánchez, D. Araújo, S. Ruffenach, O. Briot, R. García

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 202 KB

english, 2006

62

Carrier dynamics in site-controlled Ga1–xInxN quantum dots

M. Jetter, V. Pérez-Solórzano, A. Gröning, H. Gräbeldinger, M. Ubl, H. Schweizer

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 146 KB

english, 2006

63

Membrane structures containing InGaN/GaN quantum wells fabricated by wet etching of sacrificial silicon substrates

S.-H. Park, C. Liu, E. Gu, M. D. Dawson, I. M. Watson, K. Bejtka, P. R. Edwards, R. W. Martin

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 317 KB

english, 2006

64

First InGaN/GaN thin film LED using SiCOI engineered substrate

J. Dorsaz, B. Faure, J.-F. Carlin, M. Mosca, P. Gilet, F. Letertre, S. Bressot, H. Larheche, P. Bove

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 313 KB

english, 2006

65

Comparison of high quality GaN-based light-emitting diodes grown on alumina-rich spinel and sapphire substrates

Frank Tinjod, Philippe de Mierry, David Lancefield, Sébastien Chenot, Eric Virey, Jennifer L. Stone-Sundberg, Milan R. Kokta, Damien Pauwels

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 372 KB

english, 2006

66

Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layers

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, S. J. Pearton

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 343 KB

english, 2006

67

Experimental evidence for Drude-Boltzmann-like transport in a two-dimensional electron gas in an AlGaN/GaN heterostructure

Jing-Han Chen, Jyun-Ying Lin, Jung-Kai Tsai, Hun Park, Gil-Ho Kim, Jungseok Ahn, Hyun-Ick Cho, Eun-Jin Lee, Jung-Hee Lee, C.-T. Liang, Y. F. Chen

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 201 KB

english, 2006

68

High temperature refractive indices of GaN

C. Liu, S. Stepanov, A. Gott, P. A. Shields, E. Zhirnov, W. N. Wang, E. Steimetz, J. T. Zettler

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 444 KB

english, 2006

69

GaN-based Schottky diodes for hydrogen sensing in transformer oil

Peter Sandvik, Elena Babes-Dornea, Anik Roy Trudel, Marius Georgescu, Vinayak Tilak, Daniel Renaud

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 595 KB

english, 2006

70

Influence of the magnetic field on the effective mass of the two-dimensional electron gas in Alx Ga1–xN/GaN heterostructures

N. Tang, B. Shen, M. J. Wang, Z. J. Yang, K. Xu, G. Y. Zhang, Y. S. Gui, B. Zhu, S. L. Guo, J. H. Chu, K. Hoshino, Y. Arakawa

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 259 KB

english, 2006

71

Formation of low resistance nonalloyed ohmic contacts to p-type GaN by KrF laser irradiation

Min-Suk Oh, Ja-Soon Jang, Sang-Ho Kim, Tae-Yeon Seong

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 115 KB

english, 2006

72

Investigation of growth mechanisms of GaN quantum dots on (0001)AlN surface by ammonia MBE

V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K. S. Zhuravlev, Ph. Vennegues

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 324 KB

english, 2006

73

Reduced residual stress in GaN grown on 3c-SiC/Si(111) templates formed by C+-ion implantation

T. Kobayashi, N. Sawazaki, M. S. Cho, A. Hashimoto, A. Yamamoto, Y. Ito

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 100 KB

english, 2006

74

Wet chemical etching of AlN in KOH solution

I. Cimalla, Ch. Foerster, V. Cimalla, V. Lebedev, D. Cengher, O. Ambacher

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 328 KB

english, 2006

75

Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy

Tong-Ho Kim, Soojeong Choi, Pae Wu, April Brown, Maria Losurdo, Maria M. Giangregorio, Giovanni Bruno, Akihiro Moto

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 297 KB

english, 2006

76

Thermodynamic study on the role of hydrogen during hydride vapor phase epitaxy of Alx Ga1–xN

H. Murakami, J. Kikuchi, Y. Kumagai, A. Koukitu

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 291 KB

english, 2006

77

Temperature current-voltage characterisation of MOCVD grown InGaN/GaN MQW LEDs

Grigore Moldovan, Andrew Phillips, E. J. Thrush, Colin J. Humphreys

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 190 KB

english, 2006

78

Observation of a filled electronic state in the conduction band of InN

J. J. Kim, H. Makino, K. Kobayashi, P. P. Chen, E. Ikenaga, M. Kobata, A. Takeuchi, M. Awaji, T. Hanada, M. W. Cho, T. Yao

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 282 KB

english, 2006

79

Dynamic polarization rotation in pump-and-probe transients of anisotropically strained M -plane GaN films on LiAlO2

K. Omae, T. Flissikowski, P. Misra, O. Brandt, H. T. Grahn, K. Kojima, Y. Kawakami

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 133 KB

english, 2006

80

Piezoresistive and piezoelectric effects in GaN

V. Tilak, A. Vertiatchikh, J. Jiang, N. Reeves, S. Dasgupta

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 160 KB

english, 2006

81

Carrier capture and escape processes in (In,Ga)N single-quantum-well diode under forward bias condition by photoluminescence spectroscopy

A. Satake, K. Soejima, H. Aizawa, K. Fujiwara

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 128 KB

english, 2006

82

Barrier-to-well carrier dynamics of InGaN/GaN multi-quantum-wells grown by plasma assisted MBE on bulk GaN substrates

K. P. Korona, C. Skierbiszewski, M. Siekacz, A. Feduniewicz, T. Suski, G. Franssen, I. Grzegory, J. Borysiuk, M. Leszczyński

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 902 KB

english, 2006

83

Coupling of phonons with excitons bound to different donors and acceptors in hexagonal GaN

K. P. Korona, A. Wysmołek, J. Kuhl, M. Kamińska, J. M. Baranowski, D. C. Look, S. S. Park

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 812 KB

english, 2006

84

Photocapacitance characteristics of (In,Ga)N/GaN MQW structures

C. Rivera, J. L. Pau, E. Muñoz, T. Ive, O. Brandt

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 271 KB

english, 2006

85

High temperature characterization of Pt-based Schottky diodes on AlGaN/GaN heterostructures

J. Pedrós, R. Cuerdo, R. Lossy, N. Chaturvedi, J. Würfl, F. Calle

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 217 KB

english, 2006

86

Photoluminescence depth-profiling of lattice-mismatched InGaN thick film on GaN using inductively coupled plasma etching

Ji-Myon Lee, Byung-Il Kim, Seong-Ju Park

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 298 KB

english, 2006

87

Quantum kinetic theory of phonon-assisted carrier transitions in nitride based quantum-dot systems

J. Seebeck, T.R. Nielsen, M. Lorke, P. Gartner, F. Jahnke

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 155 KB

english, 2006

88

Quantum confined Stark effect in vertically correlated GaN/AlN quantum dots

S.P. Łepkowski, G. Jurczak

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 262 KB

english, 2006

89

Electrical properties of Ni/i-AlGaN/GaN structures and influence of thermal annealing

T. Sawada, N. Kimura, K. Suzuki, K. Imai, S.-W. Kim, T. Suzuki

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 833 KB

english, 2006

90

Morphological evaluation of epitaxial GaN grown on r -plane sapphire by metalorganic vapor-phase epitaxy

K. Kusakabe, K. Ohkawa

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 219 KB

english, 2006

91

AlGaN films grown on trenched sapphire substrates using a low-temperature GaNP buffer layer by MOCVD

K. Sumiyoshi, M. Tsukihara, S. Kawamichi, F. Yan, S. Sakai

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 362 KB

english, 2006

92

Effect of growth temperature on AlGaInN layers: a TEM analysis

D. Méndez, M. Albrecht, E. Monroy, D. Jalabert, H. P. Strunk, A. M. Sanchez, R. García

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 905 KB

english, 2006

93

Resonant photoluminescence excitation studies of InGaN/GaN single quantum wells

D. M. Graham, P. Dawson, M. J. Godfrey, M. J. Kappers, J. S. Barnard, C. J. Humphreys, E. J. Thrush

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 187 KB

english, 2006

94

Anisotropic ambipolar diffusion of carriers in InGaN/GaN quantum wells

Y. J. Wang, S. J. Xu, Q. Li

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 409 KB

english, 2006

95

Structural and optical characterization of AlyInxGa1–x –yN quantum dots

V. Pérez-Solórzano, A. Gröning, H. Schweizer, M. Jetter

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 266 KB

english, 2006

96

The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures

D. M. Graham, P. Dawson, Y. Zhang, P. M. F. J. Costa, M. J. Kappers, C. J. Humphreys, E. J. Thrush

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 134 KB

english, 2006

97

High quantum efficiency InGaN/GaN structures emitting at 540 nm

D. M. Graham, P. Dawson, M. J. Godfrey, M. J. Kappers, P. M. F. J. Costa, M. E. Vickers, R. Datta, C. J. Humphreys, E. J. Thrush

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 213 KB

english, 2006

98

Impact of III/V ratio on polytype and crystalline quality of AlN grown on 4H-SiC (110) substrate by molecular-beam epitaxy

M. Horita, J. Suda, T. Kimoto

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 194 KB

english, 2006

99

Orientation-dependent properties of aluminum nitride single crystals

M. Bickermann, P. Heimann, B. M. Epelbaum

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 211 KB

english, 2006

100

Evaluation of wavelength shifts of green and blue light emitting diodes with InN/GaN multiple quantum wells

Je Won Kim, Kyu Han Lee, Sangsu Hong

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 212 KB

english, 2006

101

Structural analysis of pyramidal defects in Mg-doped GaN

A. Pretorius, M. Schowalter, N. Daneu, R. Kröger, A. Rečnik, A. Rosenauer

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 223 KB

english, 2006

102

The initial growth stage in PVT growth of aluminum nitride

P. Heimann, B. M. Epelbaum, M. Bickermann, S. Nagata, A. Winnacker

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 352 KB

english, 2006

103

Advanced buffers for AlGaN/GaN HEMT and InGaN/GaN MQW on silicon substrates

Y. Dikme, M. Fieger, M. Eickelkamp, C. Giesen, E. V. Lutsenko, G. P. Yablonskii, A. Szymakowski, F. O. Jessen, A. Vescan, H. Kalisch, M. Heuken, R. H. Jansen

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 1.42 MB

english, 2006

104

Microphotoluminescence of GaN/AlN quantum dots grown by MBE

K. S. Zhuravlev, D. D. Ree, V. G. Mansurov, A. Yu. Nikitin, P. P. Paskov, P.-O. Holtz

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 394 KB

english, 2006

105

Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells

B. Arnaudov, P. P. Paskov, H. Haratizadeh, P. O. Holtz, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 197 KB

english, 2006

106

Narrow-band 400 nm MSM photodetectors using a thin InGaN layer on a GaN/sapphire structure

J. Ohsawa, T. Kozawa, O. Fujishima, H. Itoh

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 346 KB

english, 2006

107

Suppression of gate leakage current in GaN MOS devices by passivation with photo-grown Ga2O3

H.-M. Wu, L.-H. Peng

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 271 KB

english, 2006

108

New core configurations of the c-edge dislocation in wurtzite GaN

I. Belabbas, J. Chen, M. Akli Belkhir, P. Ruterana, G. Nouet

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 308 KB

english, 2006

109

Atomic structure of dislocations in nitride semiconductors

S. Petit, A. Béré, J. Chen, I. Belabbas, P. Ruterana, G. Nouet

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 171 KB

english, 2006

110

C2v nitrogen-hydrogen complexes in GaAsN revealed by X-ray Absorption Near-Edge Spectroscopy and ab initio simulations

G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A. Polimeni, M. Capizzi

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 180 KB

english, 2006

111

Clustering in GaAsSbN alloys as a possible origin of their atypical optical behavior: a Sb K-edge X-ray absorption study

Gianluca Ciatto, Jean-Christophe Harmand, Ludovic Largeau, Frank Glas

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 210 KB

english, 2006

112

AlN/GaN superlattices: strain relaxation

E. Bellet-Amalric, B. Amstatt, B. Daudin

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 151 KB

english, 2006

113

Freestanding two inch c-plane GaN layers grown on (100) γ-lithium aluminium oxide by hydride vapour phase epitaxy

E. Richter, Ch. Hennig, U. Zeimer, M. Weyers, G. Tränkle, P. Reiche, S. Ganschow, R. Uecker, K. Peters

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 209 KB

english, 2006

114

Pinholes in multiple quantum well InxGa1–xN/GaN with low In concentration

Florence Gloux, Pierre Ruterana, Gérard Nouet

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 285 KB

english, 2006

115

Energy gaps and bowing parameters of InAlGaN ternary and quaternary alloys

M. Androulidaki, N. T. Pelekanos, K. Tsagaraki, E. Dimakis, E. Iliopoulos, A. Adikimenakis, E. Bellet-Amalric, D. Jalabert, A. Georgakilas

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 297 KB

english, 2006

116

Optical cavity formation on GaN using a conventional RIE system

F. G. Kalaitzakis, G. Konstantinidis, K. Tsagaraki, M. Androulidaki, N. T. Pelekanos

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 350 KB

english, 2006

117

On the incorporation mechanism of Fe in GaN grown by metal-organic vapour phase epitaxy

R. S. Balmer, D. E. J. Soley, A. J. Simons, J. D. Mace, L. Koker, P. O. Jackson, D. J. Wallis, M. J. Uren, T. Martin

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 257 KB

english, 2006

118

Schottky gate effects on transport properties of Al0.35Ga0.65N/GaN heterostructures

A. Asgari, M. Kalafi, L. Faraone

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 294 KB

english, 2006

119

Performance of AlGaN/GaN heterojunction FETs for microwave power applications

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 446 KB

english, 2006

120

Enhanced emission efficiency of InGaN films with Si doping

Da-Bing Li, Yu-Huai Liu, Takuya Katsuno, Keisuke Nakao, Kazuya Nakamura, Masakazu Aoki, Hideto Miyake, Kazumasa Hiramatsu

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 210 KB

english, 2006

121

Fabrication and characterization of Ni-based Schottky-type AlxGa1–xN ultraviolet photodetectors with different buffer conditions

Ki Yon Park, Bong Joon Kwon, Jeong Hwan Son, Yong-Hoon Cho

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 237 KB

english, 2006

122

Carrier dynamics of optical emission from two-dimensional electron gas in undoped AlGaN/GaN single heterojunctions

H. S. Kwack, Y. H. Cho, G. H. Kim, M. R. Park, D. H. Youn, S. B. Bae, K.-S. Lee, J. H. Lee, J. H. Lee

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 338 KB

english, 2006

123

Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate

Eun-Hee Kim, Toshiki Hikosaka, Tetsuo Narita, Yoshio Honda, Nobuhiko Sawaki

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 787 KB

english, 2006

124

Magnetic, optical and electrical properties of GaN and AlN doped with rare-earth element Gd

S. W. Choi, Y. K. Zhou, S. Emura, X. J. Lee, N. Teraguchi, A. Suzuki, H. Asahi

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 275 KB

english, 2006

125

Characterization of structural defects in (110) GaN films grown on (102) sapphire substrates

P. Vennéguès, F. Mathal, Z. Bougrioua

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 448 KB

english, 2006

126

Prolonged kinetics of photoluminescence of two-dimensional electron gas in AlGaN/GaN heterostructure

T. S. Shamirzaev, N. S. Korzhavina, V. G. Mansurov, V. V. Preobrazhenskii, K. S. Zhuravlev

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 227 KB

english, 2006

127

Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy

C. Buchheim, R. Goldhahn, A. T. Winzer, C. Cobet, M. Rakel, N. Esser, U. Rossow, D. Fuhrmann, A. Hangleiter, O. Ambacher

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 230 KB

english, 2006

128

Quantitative strain analysis of GaN/AlN quantum dot multilayers

E. Sarigiannidou, A. D. Andreev, E. Monroy, B. Daudin, J. L. Rouvière

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 285 KB

english, 2006

129

Molecular beam epitaxy for high-efficiency nitride optoelectronics

J. Heffernan, M. Kauer, J. Windle, S. E. Hooper, V. Bousquet, C. Zellweger, J. M. Barnes

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 257 KB

english, 2006

130

High and low energy proton irradiation effects on AlGaN/GaN HFETs

G. Sonia, E. Richter, R. Lossy, M. Mai, J. Schmidt, M. Weyers, G. Tränkle, A. Denker, J. Opitz-Coutureau, G. Pensl, I. Brauer, H. P. Strunk

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 352 KB

english, 2006

131

p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE

T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi, N. Sawaki

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 220 KB

english, 2006

132

Growth and doping of AlGaN and electroluminescence of SAG-InGaN/AlGaN heterostructure by mixed-source HVPE

K. H. Kim, H. S. Ahn, M. Yang, K. S. Jang, S. L. Hwang, W. J. Choi, C. R. Cho, S. W. Kim, Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S. M. Lee, M. Koike

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 273 KB

english, 2006

133

The effect of Si on the growth mode of GaN

J. von Pezold, R. A. Oliver, M. J. Kappers, P. D. Bristowe, C. J. Humphreys

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 392 KB

english, 2006

134

Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire

Jae-Hoon Lee, Jeong-Tak Oh, Jin-Sub Park, Je-Won Kim, Yong-Chun Kim, Jeong-Wook Lee, Hyung-Koun Cho

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 385 KB

english, 2006

135

Metal (Ni, Au)-vacancy complexes in GaN

J. von Pezold, P. D. Bristowe

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 234 KB

english, 2006

136

RF-MBE growth of cubic InN films on MgO (001) substrates

Y. Iwahashi, H. Yaguchi, A. Nishimoto, M. Orihara, Y. Hijikata, S. Yoshida

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 189 KB

english, 2006

137

Dislocation behaviour in III-nitride epitaxial films grown on vicinal sapphire (0001) substrates

X. Q. Shen, H. Matsuhata, H. Okumura

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 179 KB

english, 2006

138

Screening of polarization induced electric fields in blue/violet InGaN/GaN laser diodes by Si doping in quantum barriers revealed by hydrostatic pressure

G. Franssen, T. Suski, P. Perlin, R. Bohdan, A. Bercha, W. Trzeciakowski, I. Makarowa, R. Czernecki, M. Leszczyński, I. Grzegory

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 200 KB

english, 2006

139

An analytical model for GaN MESFET's using new velocity-field dependence

Sneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta, R. S. Gupta

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 411 KB

english, 2006

140

Light extraction process in moth-eye structure

H. Kasugai, K. Nagamatsu, Y. Miyake, A. Honshio, T. Kawashima, K. Iida, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Kinoshita, H. Shiomi

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 640 KB

english, 2006

141

Photoluminescence and edge-incident wavelength modulation transmittance spectroscopy characterizations of InGaN/GaN multiple-quantum-well structures

D. Y. Lin, W. L. Chen, W. C. Lin, J. J. Shiu, J. Han

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 342 KB

english, 2006

142

Cathodoluminescence properties of InGaN codoped with Zn and Si

Y. Honda, Y. Yanase, M. Yamaguchi, N. Sawaki

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 246 KB

english, 2006

143

Growth of In-polar and N-polar InN nanocolumns on GaN templates by molecular beam epitaxy

Xinqiang Wang, Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 632 KB

english, 2006

144

Below bandgap transitions in an AlGaN/GaN transistor heterostructure observed by photoreflectance spectroscopy

R. Kudrawiec, M. Syperek, J. Misiewicz, M. Rudziński, A. P. Grzegorczyk, P. R. Hageman, P. K. Larsen

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 187 KB

english, 2006

145

The role of vacancies in the red luminescence from Mg-doped GaN

S. Zeng, G. N. Aliev, D. Wolverson, J. J. Davies, S. J. Bingham, D. A. Abdulmalik, P. G. Coleman, T. Wang, P. J. Parbrook

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 209 KB

english, 2006

146

The magnesium acceptor states in GaN: an investigation by optically-detected magnetic resonance

G. N. Aliev, S. Zeng, J. J. Davies, D. Wolverson, S. J. Bingham, P. J. Parbrook, T. Wang

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 161 KB

english, 2006

147

TEM analyses of wurtzite InGaN islands grown by MOVPE and MBE

A. Pretorius, T. Yamaguchi, C. Kübel, R. Kröger, D. Hommel, A. Rosenauer

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 468 KB

english, 2006

148

Study of exciton hopping in AlGaN epilayers by photoluminescence spectroscopy and Monte Carlo simulation

G. Tamulaitis, K. Kazlauskas, A. Žukauskas, J. Mickevičius, M. S. Shur, R. S. Qhalid Fareed, J. P. Zhang, R. Gaska

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 670 KB

english, 2006

149

Carrier lifetime and diffusion in GaN epilayers grown by MEMOCVDTM

G. Tamulaitis, J. Mickevičius, M. S. Shur, R. S. Qhalid Fareed, J. P. Zhang, R. Gaska

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 352 KB

english, 2006

150

A control technique of oxygen contamination by Ga beam irradiation in InN MOMBE growth

K. Isamoto, Y. Uesaka, A. Yamamoto, A. Hashimoto

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 272 KB

english, 2006

151

Effect of V/III ratio on the optical properties of Eu-doped GaN

J. Sawahata, J. W. Seo, M. Takiguchi, D. Saito, S. Nemoto, K. Akimoto

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 165 KB

english, 2006

152

Optical characterization of GaN microcavity fabricated by wet etching

C.-Y. Lu, S.-L. Wang, H.-M. Wu, L.-H. Peng

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 208 KB

english, 2006

153

Investigation of defects in GaN with varying Mg doping concentrations

Toshiyuki Obata, Naoki Matsumura, Kiyoshi Ogiwara, Hideki Hirayama, Yoshinobu Aoyagi, Koji Ishibashi

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 171 KB

english, 2006

154

Reduction of strain and dislocation defects in GaN layers grown on Si substrate by MOCVD using a substrate defect engineering technique

M. Jamil, Eric Irissou, J. R. Grandusky, V. Jindal, F. Shahedipour-Sandvik

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 180 KB

english, 2006

155

Development of pit-defect free smooth a-plane GaN surfaces on r-plane sapphire using metalorganic chemical vapor deposition: A growth mechanism study

Vibhu Jindal, James Grandusky, Muhammad Jamil, Eric Irissou, Fatemeh Shahedipour Sandvik, Kevin Matocha, Vinayak Tilak

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 295 KB

english, 2006

156

Fabrication of InN/AlInN MQWs by RF-MBE

W. Terashima, S. B. Che, Y. Ishitani, A. Yoshikawa

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 379 KB

english, 2006

157

Fabrication and characterization of 20 periods InN/InGaN MQWs

Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 447 KB

english, 2006

158

Multiple defects in GaInN multiple quantum wells grown on ELO GaN layers and on GaN substrates

S. Tomiya, O. Goto, Y. Hoshina, T. Tanaka, M. Ikeda

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 543 KB

english, 2006

159

Two to three dimensional transitions of InGaN and the impact of GaN overgrowth

T. Yamaguchi, S. Einfeldt, S. Gangopadhyay, A. Pretorius, A. Rosenauer, J. Falta, D. Hommel

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 407 KB

english, 2006

160

Comparative optical studies on violet InGaN quantum well laser diode structures grown on sapphire and GaN substrates

J. S. Hwang, J. W. Choi, A. Gokarna, Y. H. Cho, J. K. Son, S. N. Lee, T. Sakong, H. S. Paek, O. H. Nam, Y. Park

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 202 KB

english, 2006

161

Photoelectrochemical sidewall etching enhances light output power in GaN-based light emitting diodes

C. F. Lin, J. J. Dai, R. H. Jiang, J. H. Zheng, Z. J. Yang, C. C. Yu, W. C. Lee

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 500 KB

english, 2006

162

Towards fabrication of In-polar InN films and InN/GaN MQWs

Wataru Yamaguchi, Song-Bek Che, Naohiro Kikukawa, Yoshihiro Ishitani, Akihiko Yoshikawa

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 273 KB

english, 2006

163

Investigation of optical-output-power degradation in 365-nm UV-LEDs

Takashi Mukai, Daisuke Morita, Masashi Yamamoto, Kazuyuki Akaishi, Kousuke Matoba, Katsuhiro Yasutomo, Yoshio Kasai, Masahiko Sano, Shin-ichi Nagahama

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 113 KB

english, 2006

164

Fabrication of thick AlN film by low pressure hydride vapor phase epitaxy

Yu-Huai Liu, Tomoaki Tanabe, Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata, Mutsuhiro Tanaka

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 353 KB

english, 2006

165

Study on influence of atomic hydrogen irradiation on growth and property of N-polarity InN

Song-Bek Che, Koichiro Akasaka, Yoshihiro Ishitani, Akihiko Yoshikawa

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 217 KB

english, 2006

166

Growth of high-quality AlN at high growth rate by high-temperature MOVPE

N. Fujimoto, T. Kitano, G. Narita, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, K. Shimono, T. Noro, T. Takagi, A. Bandoh

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 141 KB

english, 2006

167

Fabrication and characterization of indium-tin-oxide/GaN visible-blind UV detectors

H. F. Lui, W. K. Fong, C. Surya, C. H. Cheung, A. B. Djurišić

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 241 KB

english, 2006

168

Fabrication and characterization of InGaN resonant-cavity light-emitting diodes on silicon substrates

Shih-Yung Huang, Ray-Hua Horng, Wei-Kai Wang, Don-Sing Wuu

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 262 KB

english, 2006

169

Control of leakage current in AlGaN Schottky interfaces by an ultrathin Al layer

Masamitsu Kaneko, Tamotsu Hashizume

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 475 KB

english, 2006

170

Optical characteristics of two-dimensional electrons in single and multiple AlxGa1–xN/GaN heterostructures grown by metalorganic chemical vapor deposition

Sun-Mo Kim, Ho-Sang Kwack, Sun-Woong Hwang, Yong-Hoon Cho, H. I. Cho, J. H. Lee, Kang L. Wang

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 180 KB

english, 2006

171

Influence of stacking on optical characteristics of GaN/AlN self-organized quantum dots

B. J. Kwon, J. S. Hwang, H. S. Kwack, Y. H. Cho, N. Gogneau, B. Daudin, Le Si Dang

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 394 KB

english, 2006

172

Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping

I. V. Rozhansky, D. A. Zakheim

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 150 KB

english, 2006

173

Band-to-band and inner shell excitation VIS-UV photoluminescence of quaternary InAlGaN alloys

K. Fukui, S. Naoe, K. Okada, S. Hamada, H. Hirayama

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 387 KB

english, 2006

174

Infrared reflectance measurement for InN thin film characterization

K. Fukui, Y. Kugumiya, N. Nakagawa, A. Yamamoto

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 316 KB

english, 2006

175

Mechanisms of bending of threading dislocations in MOVPE-grown GaN on (0001) sapphire

R. Datta, C. J. Humphreys

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 1.48 MB

english, 2006

176

Stimulated emission and carrier dynamics in AlInGaN multi-quantum wells

S. A. Hashemizadeh, J.-P. R. Wells, J. Brown, P. Murzyn, B. D. Jones, T. Wang, P. J. Parbrook, A. M. Fox, D. J. Mowbray, M. S. Skolnick

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 226 KB

english, 2006

177

Growth of AlN films and their characterization

Rakesh B. Jain, Ying Gao, Jianping Zhang, R. S. Qhaleed Fareed, Remis Gaska, Jiawei Li, Arulchakkravarthi Arjunan, Edmundas Kuokstis, Jinwei Yang, M. Asif Khan

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 329 KB

english, 2006

178

Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys

H. Yaguchi, T. Morioke, T. Aoki, H. Shimizu, Y. Hijikata, S. Yoshida, M. Yoshita, H. Akiyama, N. Usami, D. Aoki, K. Onabe

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 178 KB

english, 2006

179

Optimizing the internal quantum efficiency of GaInN SQW structures for green light emitters

D. Fuhrmann, U. Rossow, C. Netzel, H. Bremers, G. Ade, P. Hinze, A. Hangleiter

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 167 KB

english, 2006

180

Low resistance and highly reflective ohmic contacts to p -type GaN using transparent interlayers for flip-chip light emitting diodes

June-O Song, J. S. Kwak, Hyun-Gi Hong, Ian T. Ferguson, Tae-Yeon Seong

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 424 KB

english, 2006

181

Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD

M. Rudziński, V. Desmaris, P. A. van Hal, J. L. Weyher, P. R. Hageman, K. Dynefors, T. C. Rödle, H. F. F. Jos, H. Zirath, P. K. Larsen

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 400 KB

english, 2006

182

Conduction and valence band edge properties of hexagonal InN characterized by optical measurements

Y. Ishitani, W. Terashima, S. B. Che, A. Yoshikawa

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 424 KB

english, 2006

183

Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates

K. Balakrishnan, N. Fujimoto, T. Kitano, A. Bandoh, M. Imura, K. Nakano, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Takagi, T. Noro, K. Shimono, T. Riemann, J. Christen

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 204 KB

english, 2006

184

Influence of gas composition on the synthesis of gallium nitride powders by two-stage chemical vapor method

K. Hara, A. Yonemura, T. Uchida

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 181 KB

english, 2006

185

Photoluminescence spectra of GaN films grown at low temperature by compound-source molecular beam epitaxy

Tohru Honda, Masaru Sawada, Toshiaki Kobayashi, Shinichi Egawa, Yohta Aoki, Miwako Akiyama, Hideo Kawanishi

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 373 KB

english, 2006

186

Fabrication of GaN-based striped structures along the direction by the combination of RIE dry-etching and KOH wet-etching techniques to recover dry-etching damage

Morimichi Itoh, Toru Kinoshita, Koji Kawasaki, Misaichi Takeuchi, Choshiro Koike, Yoshinobu Aoyagi

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 444 KB

english, 2006

187

Analysis of the local structure of AlN:Mn using X-ray absorption fine structure measurements

Takao Miyajima, Yoshihiro Kudo, Tomoya Uruga, Kazuhiko Hara

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 147 KB

english, 2006

188

Analysis of the local structure of InN with a bandgap energy of 0.8 and 1.9 eV and annealed InN using X-ray absorption fine structure measurements

Takao Miyajima, Yoshihiro Kudo, Akihiro Wakahara, Tomohiro Yamaguchi, Tsutomu Araki, Yasushi Nanishi

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 163 KB

english, 2006

189

InGaN blue cathodoluminescence phosphors synthesized with long reaction time in a new reactor

Hisashi Kanie, Shingo Kobayashi, Yuji Sema

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 494 KB

english, 2006

190

Bowing of thick GaN layers grown by HVPE using ELOG

Ch. Hennig, E. Richter, U. Zeimer, M. Weyers, G. Tränkle

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 234 KB

english, 2006

191

Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near-field photoluminescence spectroscopy

Akio Kaneta, Mitsuru Funato, Yukio Narukawa, Takashi Mukai, Yoichi Kawakami

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 572 KB

english, 2006

192

Microfabrication of GaN groove on sapphire substrate treated selectively by electron-beam

H. Matsumura, M. Sumiya, Y. Kawai, M. Tomiki, K. Murakami, S. Fuke

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 354 KB

english, 2006

193

Novel buffer layer for the growth of GaN on c-sapphire

Wookhyun Lee, Seogwoo Lee, Hiroki Goto, Hyunchul Ko, Meoungwhan Cho, Takafumi Yao

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 148 KB

english, 2006

194

Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence

R. W. Martin, D. Rading, R. Kersting, E. Tallarek, E. Nogales, D. Amabile, K. Wang, V. Katchkanov, C. Trager-Cowan, K. P. O'Donnell, I. M. Watson, V. Matias, A. Vantomme, K. Lorenz, E. Alves

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 288 KB

english, 2006

195

Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing

T. Paskova, V. Darakchieva, P. P. Paskov, B. Monemar, M. Bukowski, T. Suski, N. Ashkenov, M. Schubert, D. Hommel

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 233 KB

english, 2006

196

InGaN-based light-emitting diodes grown on grooved sapphire substrates

Wei-Kai Wang, Don-Sing Wuu, Shu-Hei Lin, Shih-Yung Huang, Ray-Hua Horng

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 226 KB

english, 2006

197

Photoluminescence of a -plane GaN: comparison between MOCVD and HVPE grown layers

P. P. Paskov, R. Schifano, T. Malinauskas, T. Paskova, J. P. Bergman, B. Monemar, S. Figge, D. Hommel, B. A. Haskell, P. T. Fini, J. S. Speck, S. Nakamura

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 191 KB

english, 2006

198

Current crowding effects on blue LED operation

I. Yu. Evstratov, V. F. Mymrin, S. Yu. Karpov, Yu. N. Makarov

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 219 KB

english, 2006

199

A surface trap model and its application to analysis of III-nitride HEMT performance

Kirill A. Bulashevich, Sergey Yu. Karpov

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 317 KB

english, 2006

200

Preparation and characterisation of tantalum carbide as an optional crucible material for bulk aluminium nitride crystal growth via physical vapour transport

C. Hartmann, J. Wollweber, M. Albrecht, I. Rasin

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 466 KB

english, 2006

201

Quality and uniformity assessment of AlGaN/GaN quantum wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source

Y. Cordier, F. Pruvost, F. Semond, J. Massies, M. Leroux, P. Lorenzini, C. Chaix

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 213 KB

english, 2006

202

Radio-frequency MBE growth of cubic GaN on BP(001)/Si(001) hetero-structure

T. Kikuchi, A. S. Somintac, M. Odawara, T. Udagawa, T. Ohachi

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 1.30 MB

english, 2006

203

Raman scattering from In0.2Ga0.8N/GaN superlattices

Kenji Kisoda, Kohji Hirakura, Hiroshi Harima

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 171 KB

english, 2006

204

Radio-frequency MBE growth of cubic GaN on 3C-SiC(001)/Si(001) template

T. Ohachi, T. Kikuchi, A. Somintac, S. Yamaguchi, T. Yasuda, M. Wada

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 350 KB

english, 2006

205

Optical properties of InGaN/GaN quantum wells on sapphire and bulk GaN substrate

M. Dworzak, T. Stempel, A. Hoffmann, G. Franssen, S. Grzanka, T. Suski, R. Czernecki, M. Leszczynski, I. Grzegory

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 375 KB

english, 2006

206

Optical studies of MOCVD-grown GaN-based ferromagnetic semiconductor epilayers and devices

M. H. Kane, M. Strassburg, W. E. Fenwick, A. Asghar, J. Senawiratne, D. Azamat, Z. Hu, E. Malguth, S. Graham, U. Perera, W. Gehlhoff, A. Hoffmann, N. Dietz, C. J. Summers, I. T. Ferguson

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 212 KB

english, 2006

207

Broadband spectrally dynamic solid state illumination source

David B. Nicol, Ali Asghar, Shalini Gupta, Hun Kang, Ming Pan, Martin Strassburg, Chris Summers, Ian T. Ferguson

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 280 KB

english, 2006

208

Large enhancement of GaN-UV light emission using silver mirror resonator

N. M. Ahmed, M. R. Hashim, Z. Hassan

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 106 KB

english, 2006

209

Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by X-ray photoemission spectro-microscopy

Th. Schmidt, M. Siebert, J. I. Flege, S. Gangopadhyay, A. Pretorius, R. Kröger, S. Figge, L. Gregoratti, A. Barinov, D. Hommel, J. Falta

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 216 KB

english, 2006

210

Growth and morphology of MOVPE grown InGaN/GaN islands

S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, J. Falta

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 464 KB

english, 2006

211

Structural investigations of GaN films with X-ray standing waves

Michael Siebert, Thomas Schmidt, Jan Ingo Flege, Sven Einfeldt, Stephan Figge, Detlef Hommel, Jens Falta

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 208 KB

english, 2006

212

Investigation of hydrogen implantation induced blistering in GaN

R. Singh, I. Radu, U. Gösele, S. H. Christiansen

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 398 KB

english, 2006

213

Diffraction anomalous fine structure investigation of InGaN quantum dots

E. Piskorska, V. Holý, M. Siebert, B. Krause, T. H. Metzger, Th. Schmidt, J. Falta, T. Yamaguchi, D. Hommel

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 276 KB

english, 2006

214

Exciton dynamics in nonpolar (110) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

T. Onuma, A. Chakraborty, B. A. Haskell, S. Keller, T. Sota, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, S. F. Chichibu

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 649 KB

english, 2006

215

MOCVD of InGaN-based light emitting structures on silicon substrates with strain optimized buffer layers using long Al pre-deposition

J.-Y. Clames, Ch. Giesen, T. Meyer, M. Heuken

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 295 KB

english, 2006

216

Defect density dependence of luminescence efficiency and lifetimes in AlGaN active regions exhibiting enhanced emission from nanoscale compositional inhomogeneities

G. A. Garrett, A.V. Sampath, C. J. Collins, E. D. Readinger, W. L. Sarney, H. Shen, M. Wraback, V. Soukhoveev, A. Usikov, V. Dmitriev

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 183 KB

english, 2006

217

Fabrication of InN/InGaN multiple quantum well structures by RF-MBE

M. Kurouchi, H. Na, H. Naoi, D. Muto, S. Takado, T. Araki, T. Miyajima, Y. Nanishi

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 254 KB

english, 2006

218

AlGaN epitaxial layers grown by HVPE on sapphire substrates

V. Soukhoveev, O. Kovalenkov, L. Shapovalova, V. Ivantsov, A. Usikov, V. Dmitriev, V. Davydov, A. Smirnov

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 230 KB

english, 2006

219

InN-based layers grown by modified HVPE

A. Syrkin, A. Usikov, V. Soukhoveev, O. Kovalenkov, V. Ivantsov, V. Dmitriev, C. Collins, E. Readinger, N. Shmidt, V. Davydov, S. Nikishin, V. Kuryatkov, D. Song, D. Rosenbladt, Mark Holtz

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 176 KB

english, 2006

220

Carrier confinement effect enhanced by AlGaN/GaN multi-quantum barrier in AlInGaN based high power blue-violet laser diodes

Sung-Nam Lee, S. Y. Cho, K. H. Ha, K. K. Choi, T. Jang, S. H. Chae, H. K. Kim, H. S. Paek, Y. J. Sung, T. Sakong, J. K. Son, H. Y. Ryu, Y. H. Kim, E. Yoon, O. H. Nam, Y. Park

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 164 KB

english, 2006

221

Investigation of optical phonons and electronic properties of group III-V nitride multi quantum wells by using far infrared magnetoplasmon spectroscopy

S. Farjami Shayesteh, A. Rahmani, T. J. Parker

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 546 KB

english, 2006

222

Influence of macro defects in SiC substrate on AlGaN/GaN HEMT DC characteristics

H. Sazawa, T. Mitani, H. Bang, K. Hirata, M. Kosaki, K. Furuta, T. Tsuchiya, K. Hikosaka, S. Nakashima, H. Okumura

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 245 KB

english, 2006

223

Analysis of optical loss on blue-violet laser diodes

J. K. Son, J. S. Hwang, S. N. Lee, T. Sakong, H. Paek, S. Chae, H. K. Kim, O. Nam, J. Y. Kim, Y. H. Cho, Y. Park

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 165 KB

english, 2006

224

n-type conductivity control of AlGaN with high Al mole fraction

Takuya Katsuno, Yuhuai Liu, Dabing Li, Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata, Mitsuhiro Tanaka

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 501 KB

english, 2006

225

Thermalization and recombination in exponential band tail states

M. Niehus, R. Schwarz

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 404 KB

english, 2006

226

Diffusion lengths in GaN obtained from steady state photocarrier gratings (SSPG)

M. Niehus, R. Schwarz

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 291 KB

english, 2006

227

Localization of non-equilibrium carriers in deep InGaN quantum dots and its impact on the device performance

D. S. Sizov, V. S. Sizov, V. V. Lundin, E. E. Zavarin, A. F. Tsatsul'nikov, A. S. Vlasov, Yu. G. Musikhin, N. N. Ledentsov, A.M. Mintairov, K. Sun, J. Merz

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 313 KB

english, 2006

228

Anisotropy of the Γ-point effective mass and mobility in hexagonal InN

T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W. J. Schaff, M. Schubert

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 247 KB

english, 2006

229

Local structural characterization of epitaxial a -plane InGaN/GaN thin films by transmission electron microscopy

T. Yamazaki, K. Kusakabe, N. Nakanishi, K. Ohkawa, I. Hashimoto

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 173 KB

english, 2006

230

Recent results on AlN growth by HVPE and fabrication of free standing AlN wafers

V. Soukhoveev, O. Kovalenkov, V. Ivantsov, A. Syrkin, A. Usikov, V. Maslennikov, V. Dmitriev

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 324 KB

english, 2006

231

Crack-free AlGaN/GaN Bragg mirrors grown on Si (111) substrates by metalorganic vapor phase epitaxy

A. P. Chiu, N. C. Chen, P. H. Chang, C. F. Shih

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 415 KB

english, 2006

232

The conductivity of Mg-doped InN

V. Cimalla, M. Niebelschütz, G. Ecke, O. Ambacher, R. Goldhahn, H. Lu, W. J. Schaff

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 139 KB

english, 2006

233

In-plane anisotropy in uniaxially-strained GaN films detected by optical diffraction technique

Satoru Adachi, Yasunori Toda, Tetsuro Ishiguro, Katsuyuki Hoshino, Yasuhiko Arakawa

Journal:

physica status solidi (c)

Year:

2006

File:

PDF, 394 KB

2006

234

Cathodoluminescence and electrophysical characterization of AlxGa1–xN epilayers

V. I. Kozlovsky, Y. K. Skasyrsky, Y. Dikme, H. Kalisch, R. H. Jansen, V. G. Litvinov, M. Heuken

Journal:

physica status solidi (c)

Year:

2006

Language:

english

File:

PDF, 241 KB

english, 2006

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