Ion implantation doping for AlGaN/GaN HEMTs

physica status solidi (c) 2006 Vol. 3; Iss. 6

Ion implantation doping for AlGaN/GaN HEMTs

Muneyoshi Suita, Takuma Nanjo, Toshiyuki Oishi, Yuji Abe, Yasunori Tokuda
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Volume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200565135
File:
PDF, 164 KB
english, 2006
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