High temperature characteristics of doped channel AlGaN/GaN...

physica status solidi (c) 2006 Vol. 3; Iss. 6

High temperature characteristics of doped channel AlGaN/GaN MIS-HFETs with thin AlGaN barrier layer

C. X. Wang, N. Maeda, M. Hiroki, Y. Yokoyama, T. Makimoto, T. Kobayashi, T. Enoki
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Volume:
3
Year:
2006
Language:
english
Pages:
4
DOI:
10.1002/pssc.200565149
File:
PDF, 196 KB
english, 2006
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