Growth of InN on 6H-SiC by plasma assisted molecular beam...

physica status solidi (c) 2006 Vol. 3; Iss. 6

Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy

April S. Brown, Tong-Ho Kim, Soojeong Choi, Pae Wu, Michael Morse, Maria Losurdo, Maria M. Giangregorio, Giovanni Bruno, Akihiro Moto
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Volume:
3
Year:
2006
Language:
english
Pages:
5
DOI:
10.1002/pssc.200565150
File:
PDF, 503 KB
english, 2006
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